Power MOSFET. IRFR3707ZCPBF Datasheet

IRFR3707ZCPBF MOSFET. Datasheet pdf. Equivalent

Part IRFR3707ZCPBF
Description HEXFET Power MOSFET
Feature PD - 96045 Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l.
Manufacture International Rectifier
Datasheet
Download IRFR3707ZCPBF Datasheet



IRFR3707ZCPBF
Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l Lead-Free
Benefits
l Very Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 96045
IRFR3707ZCPbF
IRFU3707ZCPbF
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
:30V 9.5m
9.6nC
D-Pak
I-Pak
IRFR3707ZCPbF IRFU3707ZCPbF
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
™Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient (PCB Mount)
RθJA Junction-to-Ambient
Notes  through … are on page 11
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Max.
30
± 20
56f
39f
220
50
25
0.33
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
–––
Max.
3.0
50
110
Units
V
A
W
W/°C
°C
Units
°C/W
1
06/22/06



IRFR3707ZCPBF
IRFR/U3707ZCPbF
Static @ TJ = 25°C (unless otherwise specified)
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
IDSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Min. Typ. Max. Units
Conditions
30 ––– ––– V VGS = 0V, ID = 250µA
––– 0.023 ––– V/°C Reference to 25°C, ID = 1mA
e––– 7.5 9.5 mVGS = 10V, ID = 15A
––– 10 12.5
eVGS = 4.5V, ID = 12A
1.35 1.80 2.25 V VDS = VGS, ID = 250µA
––– -5.0 ––– mV/°C
––– ––– 1.0 µA VDS = 24V, VGS = 0V
––– ––– 150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
71 ––– –––
––– 9.6 14
S VDS = 15V, ID = 12A
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.6 –––
––– 0.90 –––
––– 3.5 –––
––– 2.6 –––
VDS = 15V
nC VGS = 4.5V
ID = 12A
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 4.4 –––
Qoss
td(on)
Output Charge
Turn-On Delay Time
––– 5.8 ––– nC VDS = 15V, VGS = 0V
––– 8.0 –––
eVDD = 16V, VGS = 4.5V
tr Rise Time
––– 11 –––
ID = 12A
td(off)
Turn-Off Delay Time
––– 12 ––– ns Clamped Inductive Load
tf Fall Time
––– 3.3 –––
Ciss Input Capacitance
––– 1150 –––
VGS = 0V
Coss Output Capacitance
––– 260 ––– pF VDS = 15V
Crss
Reverse Transfer Capacitance
––– 120 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
42
12
5.0
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
2
fMin. Typ. Max. Units
Conditions
––– ––– 56
MOSFET symbol
D
––– ––– 220
––– ––– 1.0
––– 25 38
––– 17 26
A showing the
integral reverse
G
p-n junction diode.
S
eV TJ = 25°C, IS = 12A, VGS = 0V
ens TJ = 25°C, IF = 12A, VDD = 15V
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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