AUTOMOTIVE MOSFET. IRFU4105ZPBF Datasheet

IRFU4105ZPBF MOSFET. Datasheet pdf. Equivalent

Part IRFU4105ZPBF
Description AUTOMOTIVE MOSFET
Feature PD - 95374A AUTOMOTIVE MOSFET Features l l l l l l IRFR4105ZPbF IRFU4105ZPbF HEXFET® Power MOSFET .
Manufacture International Rectifier
Datasheet
Download IRFU4105ZPBF Datasheet



IRFU4105ZPBF
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AUTOMOTIVE MOSFET
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free
G
PD - 95374A
IRFR4105ZPbF
IRFU4105ZPbF
HEXFET® Power MOSFET
D
VDSS = 55V
RDS(on) = 24.5m
ID = 30A
S
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating tempera-
ture, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and
a wide variety of other applications.
D-Pak
IRFR4105Z
I-Pak
IRFU4105Z
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited)
™ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
IDM Pulsed Drain Current
PD @TC = 25°C Power Dissipation
Linear Derating Factor
VGS Gate-to-Source Voltage
dEAS (Thermally limited) Single Pulse Avalanche Energy
hEAS (Tested ) Single Pulse Avalanche Energy Tested Value
ÙIAR Avalanche Current
gEAR Repetitive Avalanche Energy
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
Junction-to-Case
iRθJA Junction-to-Ambient (PCB mount)
RθJA Junction-to-Ambient
Max.
30
21
120
48
0.32
± 20
29
46
See Fig.12a, 12b, 15, 16
-55 to + 175
300 (1.6mm from case )
y y10 lbf in (1.1N m)
Typ.
–––
–––
–––
Max.
3.12
40
110
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
www.irf.com
1
12/06/04



IRFU4105ZPBF
IRFR/U4105ZPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
––– 0.053 –––
––– 19 24.5
eV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 18A
VGS(th)
Gate Threshold Voltage
2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance
16 ––– ––– S VDS = 15V, ID = 18A
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 55V, VGS = 0V
––– ––– 250
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 200 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -200
VGS = -20V
Qg Total Gate Charge
––– 18 27
ID = 18A
Qgs Gate-to-Source Charge
––– 5.3 ––– nC VDS = 44V
eQgd
Gate-to-Drain ("Miller") Charge
––– 7.0 –––
VGS = 10V
td(on)
Turn-On Delay Time
––– 10 –––
VDD = 28V
tr Rise Time
––– 40 –––
ID = 18A
td(off)
tf
Turn-Off Delay Time
Fall Time
e––– 26 ––– ns RG = 24.5
––– 24 –––
VGS = 10V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 7.5 –––
from package
G
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
––– 740 –––
––– 140 –––
––– 74 –––
––– 450 –––
––– 110 –––
––– 180 –––
and center of die contact
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
fVGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
––– ––– 30
MOSFET symbol
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
––– ––– 120
A showing the
integral reverse
––– ––– 1.3
ep-n junction diode.
V TJ = 25°C, IS = 18A, VGS = 0V
e––– 19 29 ns TJ = 25°C, IF = 18A, VDD = 28V
––– 14 21 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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