HEXFET Power MOSFET
PD - 94638A
HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power ...
Description
PD - 94638A
HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
IRLR7843 IRLU7843 ®
Qg
34nC
VDSS
30V
RDS(on) max
3.3m:
D-Pak IRLR7843
I-Pak IRLU7843
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 161 113 620 140 71 0.95 -55 to + 175 300 (1.6mm from case)
Units
V
f f
A W W/°C °C
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
1.05 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
www.irf.com
1
12/30/03
IRLR/U7843
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Th...
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