Document
PD - 94538B
HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
IRLR7821 IRLU7821 ®
Qg
10nC
VDSS RDS(on) max
30V 10m:
D-Pak IRLR7821
I-Pak IRLU7821
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
30 ± 20 65
Units
V
f 47f
260 75 37.5
A W W/°C °C
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range
g g
0.50 -55 to + 175
Thermal Resistance
Parameter
RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB Mount) Junction-to-Ambient
Typ.
Max.
2.0 50 110
Units
°C/W
gÃ
––– ––– –––
Notes through
are on page 11
www.irf.com
1
4/5/04
IRLR/U7821
Static @ TJ = 25°C (unless otherwise specified)
Parameter
BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
30 ––– ––– ––– 1.0 ––– ––– ––– ––– ––– 46 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 23 7.5 9.5 ––– -5.3 ––– ––– ––– ––– ––– 10 2.0 1.2 2.5 4.3 3.7 8.5 11 4.2 10 3.2 1030 360 120 ––– ––– 10 12.5 ––– ––– 1.0 150 100 -100 ––– 14 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– pF VGS = 0V VDS = 15V ns nC nC VDS = 16V VGS = 4.5V ID = 12A S nA V mV/°C µA V
Conditions
VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA mΩ VGS = 10V, ID = 15A VGS = 4.5V, ID = 12A
f f
VDS = VGS, ID = 250µA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VDS = 15V, ID = 12A
See Fig. 16 VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 12A Clamped Inductive Load
f
ƒ = 1.0MHz
Avalanche Characteristics
EAS IAR EAR Parameter Single Pulse Avalanche Energy Avalanche Current
Ã
dh
Typ. ––– ––– –––
Max. 230 12 7.5
Units mJ A mJ
Repetitive Avalanche Energy
––– ––– ––– ––– ––– ––– ––– ––– 26 15
Diode Characteristics
Parameter
IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reve.