IRLR7811W

PD - 94492 SMPS MOSFET Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current IRLR7811W HEXFET® Power MOSFET VDSS 30V RDS(on) max 10.5mΩ Qg 19nC D-Pak Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TA = 100°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Power Dissipation* Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 64„ 45„ 260 71 1.5 0.48 ± 12 -55 to + 175 300 (1.6mm from case ) Units A W W/°C V °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. ––– ––– ––– Max. 2.1 50 110 Units °C/W Notes  through „ are on page 9 www.irf.com 1 06/10/02 IRLR7811W Static @ TJ = 25°C (unless otherwise specified) BVDSS ∆ΒVDSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) Gate Threshold Voltage ∆VGS(th) /∆TJ Gate Threshold Voltage Coefficient IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Q sw Qg Qoss Rg td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Leakage ...