NE3514S02

HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz Micro-X plastic (S02) package APPLICATIONS 20 GHz-band DBS LNB Other K-band communication systems ORDERING INFORMATION Part Number NE3514S02-T1C NE3514S02-T1D Order Number NE3514S02-T1C-A NE3514S02-T1D-A Package S02 (Pb-Free) Quantity 2 kpcs/reel 10 kpcs/reel Marking D Supplying Form 8 mm wide embossed taping Pin 4 (Gate) faces the perforation side of the tape www.DataSheet4U.com Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3514S02 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot Note Ratings 4 −3 IDSS 100 165 +125 −65 to +125 Unit V V mA µA mW °C °C Tch Tstg Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10593EJ01V0DS (1st edition) Date Published February 2006 CP(N) NE3514S02 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Drain to Source Voltage Drain Current Input Power Symbol VDS ID Pin MIN. 1 5 − TYP. 2 10 − MAX. 3 15 0 Unit V mA dBm ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise spe...