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MODE MOSFET. 2N7002E Datasheet |
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2N7002E
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
60V
RDS(ON) max
3Ω @ VGS = 10V
ID max
TA = +25°C
300mA
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Applications
Motor Control
Power Management Functions
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish annealed over Alloy 42 leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 e3
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Top View
GS
Top View
Pin Out Configuration
Gate
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
2N7002E-7-F
2N7002E-13-F
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
K7B
Date Code Key
Year
2003
Code
P
Chengdu A/T Site
2004 2005 2006
RST
Month Jan Feb Mar
Code
1
2
3
K7B
Shanghai A/T Site
K7B = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y orY= Year (ex: A = 2013)
M = Month (ex: 9 = September)
2007
U
Apr
4
2008 2009 2010 2011
VWX Y
May Jun
56
Jul
7
2012
Z
Aug
8
2013
A
Sep
9
2014 2015 2016
BCD
Oct Nov
ON
2017
E
Dec
D
2N7002E
Document number: DS30376 Rev. 14 - 2
1 of 5
www.diodes.com
August 2013
© Diodes Incorporated
|
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Drain-Gate Voltage RGS 1.0M
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Continuous
Pulsed
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Symbol
VDSS
VDGR
VGSS
ID
ID
IS
IDM
2N7002E
Value
60
60
±20
±40
250
200
300
240
500
800
Units
V
V
V
mA
mA
mA
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
(Note 6)
Symbol
PD
RθJA
RθJC
TJ, TSTG
Value
370
540
348
241
91
-55 to 150
Units
mW
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ
@ TC = +25°C
@ TC = +125°C
BVDSS
IDSS
IGSS
60
70
@ TJ = +25°C
VGS(th)
RDS (ON)
1.0
1.6
2.0
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (VGS = 4.5V)
Gate-Source Charge
Gate-Drain Charge
SWITCHING CHARACTERISTICS (Note 8)
Turn-On Delay Time
Turn-Off Delay Time
ID(ON)
gFS
0.8
80
Ciss
Coss
Crss
Rg
Qg
Qgs
Qgd
tD(ON)
tD(OFF)
1.0
22
11
2.0
120
223
82
178
7.0
11
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
1.0
500
±10
2.5
3
4
50
25
5.0
20
20
Unit Test Condition
V VGS = 0V, ID = 10µA
µA VDS = 60V, VGS = 0V
nA VGS = ±15V, VDS = 0V
V VDS = VGS, ID = 250µA
Ω VGS = 10V, ID = 250mA
VGS = 4.5V, ID = 200mA
A VGS = 10V, VDS = 7.5V
mS VDS =10V, ID = 0.2A
pF
pF VDS = 25V, VGS = 0V, f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1.0MHz
pC
pC VDS = 10V, ID = 250mA
pC
ns VDD = 30V, ID = 0.2A,
ns RL = 150Ω, VGEN = 10V, RGEN = 25Ω
2N7002E
Document number: DS30376 Rev. 14 - 2
2 of 5
www.diodes.com
August 2013
© Diodes Incorporated
|
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