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TrenchMOS FET. 2N7002E Datasheet |
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2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using
TrenchMOS™ technology.
1.2 Features
s Logic level threshold compatible
s Surface-mounted package
s Very fast switching
s TrenchMOS™ technology
1.3 Applications
s Logic level translator
s High speed line driver
1.4 Quick reference data
s VDS ≤ 60 V
s RDSon ≤ 3 Ω
s ID ≤ 385 mA
s Ptot = 0.83 W
2. Pinning information
Table 1: Pinning
Pin Description
1 gate (G)
2 source (S)
3 drain (D)
Simplified outline
3
12
SOT23
Symbol
D
G
mbb076 S
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Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
3. Ordering information
Table 2: Ordering information
Type number
Package
Name
Description
2N7002E
TO-236AB plastic surface mounted package; 3 leads
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
drain-source voltage (DC)
drain-gate voltage (DC)
25 °C ≤ Tj ≤ 150 °C
25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ
VGS
VGSM
ID
gate-source voltage (DC)
peak gate-source voltage
drain current (DC)
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
tp ≤ 50 µs; pulsed; duty cycle = 25 %
Tsp = 25 °C; VGS = 10 V; Figure 2 and 3
Tsp = 100 °C; VGS = 10 V; Figure 2
Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3
Tsp = 25 °C; Figure 1
Tj junction temperature
Source-drain diode
IS source (diode forward) current (DC) Tsp = 25 °C
ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs
Version
SOT23
Min Max Unit
- 60 V
- 60 V
- ±30 V
- ±40 V
- 385 mA
- 245 mA
- 1.5 A
- 0.83 W
−65 +150 °C
−65 +150 °C
- 385 mA
- 1.5 A
9397 750 14944
Product data sheet
Rev. 02 — 26 April 2005
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
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