2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005 Product data sheet
1. Product profile
1.1 General description
N...
2N7002E
N-channel TrenchMOS™ FET
Rev. 02 — 26 April 2005 Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect
Transistor (FET) in a plastic package using TrenchMOS™ technology.
1.2 Features
s Logic level threshold compatible s Surface-mounted package s Very fast switching s TrenchMOS™ technology
1.3 Applications
s Logic level translator s High speed line driver
1.4 Quick reference data
s VDS ≤ 60 V s RDSon ≤ 3 Ω s ID ≤ 385 mA s Ptot = 0.83 W
2. Pinning information
Table 1: Pin 1 2 3 Pinning Description gate (G) source (S) drain (D)
1 2 3
D
Simplified outline
Symbol
G
SOT23
mbb076
S
Philips Semiconductors
2N7002E
N-channel TrenchMOS™ FET
3. Ordering information
Table 2: Ordering information Package Name 2N7002E TO-236AB Description plastic surface mounted package; 3 leads Version SOT23 Type number
4. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS VGSM ID IDM Ptot Tstg Tj IS ISM drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) peak gate-source voltage drain current (DC) peak drain current total power dissipation storage temperature junction temperature source (diode forward) current (DC) Tsp = 25 °C peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs tp ≤ 50 µs; pulsed; duty cycle = 25 % Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤...