SWITCHING DIODE. 1N4448HWT Datasheet

1N4448HWT DIODE. Datasheet pdf. Equivalent

Part 1N4448HWT
Description SURFACE MOUNT FAST SWITCHING DIODE
Feature SPICE MODEL: 1N4448HWT 1N4448HWT Lead-free Green SURFACE MOUNT FAST SWITCHING DIODE · · · · · · .
Manufacture Diodes Incorporated
Datasheet
Download 1N4448HWT Datasheet



1N4448HWT
SPICE MODEL: 1N4448HWT
1N4448HWT
Lead-free Green SURFACE MOUNT FAST SWITCHING DIODE
Features
· Fast Switching Speed
· Ultra-Small Surface Mount Package
· For General Purpose Switching Applications
· High Conductance
· Lead Free by Design/RoHS Compliant (Note 1)
· "Green" Device, Note 3 and 4
Mechanical Data
· Case: SOD-523
· Case Material: Molded Plastic, "Green" Molding
Compound, Note 4. UL Flammability Classification
Rating 94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminal Connections: Cathode Band
· Terminals: Solderable per MIL-STD-202, Method 208
· Lead Free Plating (Matte Tin Finish) annealed over
Alloy 42 leadframe.
· Marking Code: T8
· Ordering Information: See Last Page
· Weight: 0.002 grams (approximate)
MARKING CODE
Maximum Ratings @ TA = 25°C unless otherwise specified
CATHODE MARK
SOD-523
Dim Min Max
A 1.50 1.70
B 1.10 1.30
C 0.25 0.35
D 0.70 0.90
E 0.10 0.20
C E G 0.55 0.65
D G All Dimensions in mm
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Forward Continuous Current
Average Rectified Output Current
Non-Repetitive Peak Forward Surge Current @ t = 1.0ms
@ t = 1.0s
Operating and Storage Temperature Range
Symbol
VRM
VRRM
VRWM
VR
VR(RMS)
IFM
IO
IFSM
Tj , TSTG
Value
100
80
57
250
125
2.0
1.0
-65 to +150
Unit
V
V
V
mA
mA
A
°C
Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 2)
Thermal Resistance Junction to Ambient (Note 2)
Symbol
Pd
RqJA
Value
150
833
Unit
mW
°C/W
Note:
1. No purposefully added lead.
2. Part mounted on FR-4 board with recommended pad layout, which can be found on our website
at http://www.diodes.com/datasheets/ap02001.pdf.
3. Diode's Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Product manufactured with date code 0609 (week 9, 2006) and newer are built with Green Molding Compound. Product manufactured prior to date
code 0609 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.
DS30395 Rev. 5 - 2
1 of 3
www.diodes.com
1N4448HWT
ã Diodes Incorporated



1N4448HWT
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Reverse Breakdown Voltage (Note 5)
Forward Voltage
Symbol
V(BR)R
VF
Min
80
0.62
¾
¾
¾
Peak Reverse Current (Note 5)
IR ¾
Total Capacitance
Reverse Recovery Time
CT
trr
Note: 5. Short duration pulse test used to minimize self-heating effect.
¾
¾
Max
¾
0.72
0.855
1.0
1.25
100
50
30
25
3.0
4.0
Unit
V
V
nA
mA
mA
nA
pF
ns
Test Conditions
IR = 100mA
IF = 5.0mA
IF = 10mA
IF = 100mA
IF = 150mA
VR = 80V
VR = 75V, Tj = 150°C
VR = 25V, Tj = 150°C
VR = 20V
VR = 0.5V, f = 1.0MHz
IF = IR = 10mA,
Irr = 0.1 x IR, RL = 100W
200 100
150
100
50
Ta = 25°C
10
Ta = 50°C
Ta = 85°C
1
Ta = 0°C
Ta = -30°C
0
0
10.0
25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Derating Curve
0.1
0
2.5
200 400 600 800
VF, FORWARD VOLTAGE (mV)
Fig. 2 Typical Forward Characteristics
1000
Ta = 100°C
1.0
2.0
0.10
0.01
Ta = 75°C
Ta = 50°C
Ta = 25°C
Ta = -30°C
Ta = 0°C
1.5
1.0
0.5
0.001
0
20 40 60 80
0
0
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
DS30395 Rev. 5 - 2
2 of 3
www.diodes.com
2 4 6 8 10
IF, FORWARD CURRENT (mA)
Fig. 4 Reverse Recovery Time vs.
Forward Current
1N4448HWT





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)