D-S MOSFET. 2N7002K Datasheet

2N7002K MOSFET. Datasheet pdf. Equivalent

Part 2N7002K
Description N-Channel 60-V (D-S) MOSFET
Feature www.vishay.com 2N7002K Vishay Siliconix N-Channel 60 V (D-S) MOSFET SOT-23 (TO-236) D 3 Marking .
Manufacture Vishay Siliconix
Datasheet
Download 2N7002K Datasheet



2N7002K
www.vishay.com
2N7002K
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
SOT-23 (TO-236)
D
3
Marking code: 7K
1
G
Top View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
Qg typ. (nC)
ID (mA)
Configuration
2
S
60
2
0.4
300
Single
FEATURES
• Low on-resistance: 2
• Low threshold: 2 V (typ.)
• Low input capacitance: 25 pF
Available
• Fast switching speed: 25 ns
Available
• Low input and output leakage
• TrenchFET® power MOSFET
Available
• 2000 V ESD protection
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
BENEFITS
• Low offset voltage
• Low voltage operation
• Easily driven without buffer
• High speed circuits
• Low error voltage
APPLICATIONS
D
• Direct logic-level interface: TTL/CMOS
• Drivers:
relays, solenoids, lamps, hammers, G
display, memories, transistors, etc.
• Battery operated systems
• Solid state relays
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and halogen-free
SOT-23
2N7002K-T1-E3
2N7002K-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
VDS
Gate-source voltage
VGS
Continuous drain current (TJ = 150 °C) b
Pulsed drain current a
TA = 25 °C
TA = 100 °C
ID
IDM
Power dissipation b
Maximum junction-to-ambient b
TA = 25 °C
TA = 100 °C
PD
RthJA
Operating junction and storage temperature range
Notes
a. Pulse width limited by maximum junction temperature
b. Surface mounted on FR4 board
TJ, Tstg
LIMIT
60
± 20
300
190
800
0.35
0.14
350
-55 to +150
UNIT
V
mA
W
°C/W
°C
S17-1299-Rev. F, 21-Aug-17
1
Document Number: 71333
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



2N7002K
www.vishay.com
2N7002K
Vishay Siliconix
SPECIFICATIONS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage
Gate-threshold voltage
Gate-body leakage
Zero gate voltage drain current
On-state drain current b
Drain-source on-resistance b
Forward transconductance b
Diode forward voltage
Dynamic a, b
VDS
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VSD
VGS = 0 V, ID = 10 μA
VDS = VGS, ID = 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 15 V
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
VDS = 0 V, VGS = ± 5 V
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V, VDS = 7.5 V
VGS = 4.5 V, VDS = 10 V
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
VDS = 10 V, ID = 200 mA
IS = 200 mA, VGS = 0 V
Total gate charge
Qg
VDS = 10 V, VGS = 4.5 V
ID 250 mA
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching a, c
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V
f = 1 MHz
Turn-on time
Turn-off time
td(on)
td(off)
VDD = 30 V, RL = 150
ID 200 mA, VGEN = 10 V, Rg = 10
Notes
a. For DESIGN AID ONLY, not subject to production testing
b. Pulse test: pulse width 300 μs duty cycle 2 %
c. Switching time is essentially independent of operating temperature
MIN.
LIMITS
TYP. a MAX.
UNIT
60 -
-
V
1 - 2.5
- - ± 10
μA
- -1
- - ± 150
- - ± 1000 nA
- - ± 100
- -1
μA
- - 500
800 -
500 -
-
mA
-
- -2
- -4
100 -
- mS
- - 1.3 V
- 0.4 0.6 nC
- 30 -
- 6 - pF
- 2.5 -
- - 25
ns
- - 35
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S17-1299-Rev. F, 21-Aug-17
2
Document Number: 71333
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000





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