Flash Memory. AM29DS320G Datasheet

AM29DS320G Memory. Datasheet pdf. Equivalent

Part AM29DS320G
Description Simultaneous Operation Flash Memory
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Manufacture AMD
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AM29DS320G
Am29DS320G
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Publication Number 26492 Revision A Amendment +1 Issue Date January 27, 2003



AM29DS320G
ADVANCE INFORMATION
Am29DS320G
32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory
DISTINCTIVE CHARACTERISTICS
ARCHITECTURAL ADVANTAGES
Simultaneous Read/Write operations
— Data can be continuously read from one bank while
executing erase/program functions in another bank
— Zero latency between read and write operations
Flexible BankTM architecture
— Read may occur in any of the three banks not being
written or erased.
— Four banks may be grouped by customer to achieve
desired bank divisions.
256-byte SecSi(Secured Silicon) Sector
Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number;
verifiable as factory locked through autoselect
function. ExpressFlash option allows entire sector to
be available for factory-secured data
Customer lockable: One time programmable. Once
locked, data cannot be changed.
Zero Power Operation
— Sophisticated power management circuits reduce
power consumed during inactive periods to nearly
zero
Package options
— 48-ball FBGA
— 48-pin TSOP
Top or bottom boot blocks
Manufactured on 0.17 µm process technology
Compatible with JEDEC standards
— Pinout and software compatible with
single-power-supply flash standard
PERFORMANCE CHARACTERISTICS
High performance
— Access time as fast 70 ns
— Program time: 4 µs/word typical utilizing Accelerate
function
Ultra low power consumption (typical values)
— 2 mA active read current at 1 MHz
— 10 mA active read current at 5 MHz
— 200 nA in standby or automatic sleep mode
Minimum 1 million erase cycles guaranteed per
sector
20 year data retention at 125°C
— Reliable operation for the life of the system
SOFTWARE FEATURES
Data Management Software (DMS)
— AMD-supplied software manages data programming,
enabling EEPROM emulation
— Eases historical sector erase flash limitations
Supports Common Flash Memory Interface (CFI)
Erase Suspend/Erase Resume
— Suspends erase operations to allow reading from
other sectors in the same bank
Data# Polling and Toggle Bits
— Provides a software method of detecting the status of
program or erase cycles
Unlock Bypass Program command
— Reduces overall programming time when issuing
multiple program command sequences
HARDWARE FEATURES
Any combination of sectors can be erased
Ready/Busy# output (RY/BY#)
— Hardware method for detecting program or erase
cycle completion
Hardware reset pin (RESET#)
— Hardware method of resetting the internal state
machine to the read mode
WP#/ACC input pin
— Write protect (WP#) function allows protection of two
outermost boot sectors, regardless of sector protect
status
— Acceleration (ACC) function accelerates program
timing
Sector protection
— Hardware method of locking a sector, either
in-system or using programming equipment, to
prevent any program or erase operation within that
sector
— Temporary Sector Unprotect allows changing data in
protected sectors in-system
This document contains information on a product under development at Advanced Micro Devices. The information
Publication# 26492 Rev: A Amendment:+1
is intended to help you evaluate this product. AMD reserves the right to change or discontinue work on this proposed
Issue Date: January 27, 2003
product without notice.
Refer to AMD’s Website (www.amd.com) for the latest information.





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