Document
SPICE MODEL: DMN2004K
Lead-free Green
DMN2004K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
ADVANCED NEW INFORMATION PRODUCT
· · · · · · · · ·
Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability
J E G TOP VIEW S D G H K L B C D A
SOT-23 Dim A B C D E
M
Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0°
Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8°
G H J K
Mechanical Data
· · · · · · · ·
Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate)
Gate Protection Diode Source Gate Drain
L M a
All Dimensions in mm
ESD protected up to 2KV
EQUIVALENT CIRCUIT
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3)
@ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25°C TA = 85°C ID IDM Pd RqJA Tj, TSTG Value 20 ±8 540 390 1.5 350 357 -65 to +150 Units V V mA A mW °C/W °C
Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range
Note: 1. 2. 3. 4.
Device mounted on FR-4 PCB. No purposefully added lead. Pulse width £10mS, Duty Cycle £1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30938 Rev. 2 - 2
1 of 4 www.diodes.com
DMN2004K
ã Diodes Incorporated
Electrical Characteristics
@ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 20 ¾ ¾ 0.5 ¾ 200 0.5 ¾ ¾ ¾ Typ ¾ ¾ ¾ ¾ 0.4 0.5 0.7 ¾ ¾ ¾ ¾ ¾ Max ¾ 1 ±1 1.0 0.55 0.70 0.9 ¾ 1.4 150 25 20 Unit V mA mA V W ms V pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VDS = VGS, ID = 250mA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA
NEW PRODUCT
Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
Notes:
5. Short duration test pulse used to minimize self-heating effect.
0.9
VGS = 2.2V VGS = 2.0V
1000 900 800
VDS = 10V Pulsed
ID, DRAIN CURRENT (A)
VGS = 1.8V
ID, DRAIN CURRENT (mA)
700 600 500 400 300 200 100 0 0.4 0.8 1.2
TA = 150° C
0.6
VGS = 1.6V
0.3
VGS = 1.4V
TA = 85° C
TA = 25° C TA = -55° C
VGS = 1.2V
0 0 1 2 3 4 5
1.6
2
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage
1
1
VDS = 10V ID = 1mA Pulsed
VGS(th), GATE THRESHOLD VOLTAGE (V)
0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2
VGS = 10V Pulsed
TA = 125° C TA = 150° C
TA = 85° C
TA = -55° C
0.1 0 -75
TA = 25° C
TA = 0° C
TA = -25° C
0.1
-50 -25 0 25 50 75 100 125 150
0.2
0.4
0.6
0.8
1.0
Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current
DS30938 Rev. 2 - 2
2 of 4 www.diodes.com
DMN2004K
1
1.0
VGS = 5V Pulsed
TA = 25°C
NEW PRODUCT
0.9 0.8
TA = 150° C
TA = 125° C
TA = 85° C
0.7 0.6 0.5 0.4 0.3
ID = 540mA
TA = -55° C TA = 25° C TA = 0° C TA = -25° C
0.2 0.1 0
0.1 0.2 0.4 0.6 0.8 1.0
0
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
2
4
6
VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage
0.5
1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0.4 0.6 0.8 1 1.2
VGS = 4.5V Tj = 25°C
0.4
VGS = 1.8V
VGS = 4.5V, ID = 540mA
0.3
0.2
VGS = 2.5V
VGS = 10V, ID = 280mA
0.1
0 -50
-25
0
25
50
75
100
125 150
ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage
Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature
1
VGS = 0V
10000
IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)
1000
Tj = 150°C
IDR, REVERSE DRAIN CURRENT (A)
TA = 150° C
0.1
TA = 125° C TA = 85° C TA = 25° C
100
Tj = 100°C
10
0.01
TA = 0° C TA = -25° C TA = -55° C
1
0.1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage
0.001 0 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltag.