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DMN2004K Dataheets PDF



Part Number DMN2004K
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description N-Channel Transistor
Datasheet DMN2004K DatasheetDMN2004K Datasheet (PDF)

SPICE MODEL: DMN2004K Lead-free Green DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ADVANCED NEW INFORMATION PRODUCT · · · · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability J E G TOP VIEW S D G H K L B C D A SOT-23 Dim A B C D E M Min 0.37 .

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SPICE MODEL: DMN2004K Lead-free Green DMN2004K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features ADVANCED NEW INFORMATION PRODUCT · · · · · · · · · Low On-Resistance: RDS(ON) Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 2) ESD Protected up to 2KV "Green" Device (Note 4) Qualified to AEC-Q101 standards for High Reliability J E G TOP VIEW S D G H K L B C D A SOT-23 Dim A B C D E M Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0° Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8° G H J K Mechanical Data · · · · · · · · Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020C Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking: See Last Page Ordering & Date Code Information: See Last Page Weight: 0.008 grams (approximate) Gate Protection Diode Source Gate Drain L M a All Dimensions in mm ESD protected up to 2KV EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) Pulsed Drain Current (Note 3) @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Steady State TA = 25°C TA = 85°C ID IDM Pd RqJA Tj, TSTG Value 20 ±8 540 390 1.5 350 357 -65 to +150 Units V V mA A mW °C/W °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Note: 1. 2. 3. 4. Device mounted on FR-4 PCB. No purposefully added lead. Pulse width £10mS, Duty Cycle £1%. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30938 Rev. 2 - 2 1 of 4 www.diodes.com DMN2004K ã Diodes Incorporated Electrical Characteristics @ TA = 25°C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Min 20 ¾ ¾ 0.5 ¾ 200 0.5 ¾ ¾ ¾ Typ ¾ ¾ ¾ ¾ 0.4 0.5 0.7 ¾ ¾ ¾ ¾ ¾ Max ¾ 1 ±1 1.0 0.55 0.70 0.9 ¾ 1.4 150 25 20 Unit V mA mA V W ms V pF pF pF VDS = 16V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 16V, VGS = 0V VGS = ±4.5V, VDS = 0V VDS = VGS, ID = 250mA VGS = 4.5V, ID = 540mA VGS = 2.5V, ID = 500mA VGS = 1.8V, ID = 350mA VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 5) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Notes: 5. Short duration test pulse used to minimize self-heating effect. 0.9 VGS = 2.2V VGS = 2.0V 1000 900 800 VDS = 10V Pulsed ID, DRAIN CURRENT (A) VGS = 1.8V ID, DRAIN CURRENT (mA) 700 600 500 400 300 200 100 0 0.4 0.8 1.2 TA = 150° C 0.6 VGS = 1.6V 0.3 VGS = 1.4V TA = 85° C TA = 25° C TA = -55° C VGS = 1.2V 0 0 1 2 3 4 5 1.6 2 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Reverse Drain Current vs. Source-Drain Voltage 1 1 VDS = 10V ID = 1mA Pulsed VGS(th), GATE THRESHOLD VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 VGS = 10V Pulsed TA = 125° C TA = 150° C TA = 85° C TA = -55° C 0.1 0 -75 TA = 25° C TA = 0° C TA = -25° C 0.1 -50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current DS30938 Rev. 2 - 2 2 of 4 www.diodes.com DMN2004K 1 1.0 VGS = 5V Pulsed TA = 25°C NEW PRODUCT 0.9 0.8 TA = 150° C TA = 125° C TA = 85° C 0.7 0.6 0.5 0.4 0.3 ID = 540mA TA = -55° C TA = 25° C TA = 0° C TA = -25° C 0.2 0.1 0 0.1 0.2 0.4 0.6 0.8 1.0 0 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2 4 6 VGS, GATE-SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source, On-Resistance vs. Gate-Source Voltage 0.5 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0 0.2 0.4 0.6 0.8 1 1.2 VGS = 4.5V Tj = 25°C 0.4 VGS = 1.8V VGS = 4.5V, ID = 540mA 0.3 0.2 VGS = 2.5V VGS = 10V, ID = 280mA 0.1 0 -50 -25 0 25 50 75 100 125 150 ID, DRAIN CURRENT (A) Fig. 7 On-Resistance vs. Drain Current and Gate Voltage Tj, JUNCTION TEMPERATURE (° C) Fig. 8 Static Drain-Source, On-Resistance vs. Temperature 1 VGS = 0V 10000 IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA) 1000 Tj = 150°C IDR, REVERSE DRAIN CURRENT (A) TA = 150° C 0.1 TA = 125° C TA = 85° C TA = 25° C 100 Tj = 100°C 10 0.01 TA = 0° C TA = -25° C TA = -55° C 1 0.1 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Drain Source Leakage Current vs. Voltage 0.001 0 0.5 VSD, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Reverse Drain Current vs. Source-Drain Voltag.


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