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DMN5L06W Dataheets PDF



Part Number DMN5L06W
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description N-Channel Transistor
Datasheet DMN5L06W DatasheetDMN5L06W Datasheet (PDF)

DMN5L06W Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · · N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3) K G G H M S A D B C SOT-323 Dim A B C D E G H J K J D F L Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40.

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DMN5L06W Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · · N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3) K G G H M S A D B C SOT-323 Dim A B C D E G H J K J D F L Min 0.25 1.15 2.00 0.30 1.20 1.80 0.0 0.90 0.25 0.10 0° Max 0.40 1.35 2.20 0.40 1.40 2.20 0.10 1.00 0.40 0.18 8° 0.65 Nominal Mechanical Data · · · · · · · · Case: SOT-323 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) L M a Drain All Dimensions in mm Gate Source EQUIVALENT CIRCUIT Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 50 50 ±20 ±40 280 1.5 200 625 -55 to +150 Units V V V mA A mW °C/W °C Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30613 Rev. 3 - 2 1 of 4 www.diodes.com DMN5L06W ã Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance @ TA = 25°C unless otherwise specified Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) RDS (ON) ID(ON) ½Yfs½ VSD Ciss Coss Crss Min 50 ¾ ¾ 0.49 ¾ ¾ 0.5 200 0.5 ¾ ¾ ¾ Typ ¾ ¾ ¾ ¾ 1.6 2.2 1.0 ¾ ¾ ¾ ¾ ¾ Max ¾ 0.1 500 ±20 1.2 3 4 ¾ ¾ 1.4 50 25 5.0 VDS = 10V Pulsed Unit V µA nA V W A mS V pF pF pF Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA VDS = 25V, VGS = 0V f = 1.0MHz 1.5 1 VGS = 10V 8V 6V 5V 4V 3V 8V 10V ID,.


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