Document
Features
Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected up to 2kV Qualified to AEC-Q101 Standards for High Reliability
DMN5/L06VK/L06VAK/010VAK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
Case: SOT563 Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.006 grams (Approximate)
D2 G1 S1
D2 S1 G1
ESD protected up to 2kV
SOT563 Top View
S2 G2 D1
DMN5L06VK
G2 S2 D1
DMN5L06VAK DMN5010VAK
Ordering Information (Note 4)
Notes:
Part Number DMN5L06VK-7 DMN5L06VK-7A DMN5L06VK-13 DMN5L06VK-13A DMN5L06VAK-7 DMN5L06VAK-7A DMN5L06VAK-13 DMN5L06VAK-13A DMN5010VAK-7 DMN5010VAK-7A DMN5010VAK-13 DMN5010VAK-13A
Case SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 SOT563 SOT563
Packaging 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel 3,000/Tape & Reel 3,000/Tape & Reel 10,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
1 of 7 www.diodes.com
February 2017
© Diodes Incorporated
Marking Information (Note 5 & 6)
DMN5L06VK-7/-13 (Note 5) D1 G2 S2
KAB YM
S1 G1 D2
DMN5L06VK-7A/-13A (Note 6)
654
D1 G2 S2
KAB YM
S1 G1 D2
12
3
DMN5/L06VK/L06VAK/010VAK
KAB= DMN5L06VK Product Type Marking Code
YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September)
DMN5L06VAK-7/-13 (Note 5) DMN5010VAK-7/-13 (Note 5)
D1 S2
G2
xxx YM
G1 S1
D2
DMN5L06VAK-7A/-13A (Note 6) DMN5010VAK-7A/-13A (Note 6)
65
D1 S2
4
G2
xxx YM
G1 S1
12
D2
3
xxx = Product Type Marking Code: KAE or KAE or KAC
YM = Date Code Marking Y = Year (ex: E = 2017) M = Month (ex: 9 = September)
Date Code Key
Year
2006
~
2016
2017
2018
2019
2020
2021
2022
2023
2024
Code
T
~
D
E
F
G
H
I
JKL
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov
Code
1
2
3
4
5
6
7
8
9
ON
Notes: 5. Package is non-polarized. Parts may be on reel in orientation illustrated, 180°rotated, or mixed (both ways). 6. Part number with suffix 7A and 13A designates devices marked with a Pin 1 indicator. There is no other difference between both devices.
2025 M
Dec D
DMN5/L06VK/L06VAK/010VAK
Document number: DS30769 Rev. 13 - 2
2 of 7 www.diodes.com
February 2017
© Diodes Incorporated
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Drain Source Voltage Drain-Gate Voltage RGS 1.0MΩ Gate-Source Voltage
Drain Current (Note 7)
Continuous Pulsed
Continuous Pulsed
Symbol VDSS VDGR
VGSS
ID IDM
DMN5/L06VK/L06VAK/010VAK
Value 50
50
20 40
280 1.5
Unit V V
V
mA A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Operating and Storage Temperature Range
Symbol PD RθJA
TJ, TSTG
Value 250 500 -55 to +150
Unit mW C/W C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
Symbol Min
@ TC = +25°C
BVDSS IDSS
50 —
Typ
— —
Gate-Body Leakage
IGSS
—
—
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
@TJ = +25°C @TJ = +0°C to +85°C (Note 9)
VGS(TH)
Static Drain-Source On-Resistance
RDS(ON)
0.49 0.30
— — —
—
— — —
On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance
ID(ON) |Yfs| VSD
Ciss Coss Crss
0.5 200 0.5
— — —
1.4 — —
— — —
Notes:
7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing.
Max
— 60 1 500 50
1.0 1.2 3.0 2.5 2.0 — — 1.4
50 25 5.0
Unit
Test Condition
V VGS = 0V, ID = 10µA
nA VDS = 50V, VGS = 0V
µA VGS = ±12V, VDS = 0V nA VGS = ±10V, VDS = 0V nA VGS = ±5V, VDS = 0V
V VDS = VGS,.