Document
DMN5L06DW
Lead-free Green
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
NEW PRODUCT
Features
· · · · · · · · ·
Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3)
S2 G2
SOT-363
A
D2
Dim A
S1
Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0°
Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8°
G1
B
B C
D1
C D F H
M
0.65 Nominal
G H K
Mechanical Data
· · · · · · · ·
Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
J K L M a
J
D
F
L
All Dimensions in mm
D2 G1 S1
S2
G2
D1
Maximum Ratings
Drain-Source Voltage
@ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 50 50 ±20 ±40 280 1.5 200 833 -55 to +150 Units V V V mA A mW °C/W °C
Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30751 Rev. 1 - 2
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DMN5L06DW
ã Diodes Incorporated
NEW PRODUCT
Electrical Characteristics
Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance
@ TA = 25°C unless otherwise specified Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss Min 50 ¾ ¾ 0.49 ¾ ¾ 0.5 200 0.5 ¾ ¾ ¾ Typ ¾ ¾ ¾ ¾ 1.6 2.2 1.0 ¾ ¾ ¾ ¾ ¾ Max ¾ 0.1 500 ±20 1.2 3 4 ¾ ¾ 1.4 50 25 5.0 Unit V µA nA V W A mS V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA
1.5
VGS = 10V 8V 6V 5V 4V 3V
1
8V 10V 6V
VDS = 10V Pulsed
1.2
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
5V 4V 0.9 3V
0.1
TA = 150° C TA = 125° C TA = 85° C
0.6
0.01
TA = 25° C TA = 0° C TA = -25° C TA = -55° C
0.3
0 0 1 2 3 4 5
0.001 0 0.5 1 1.5 2 2.5 3 3.5
VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics
DS30751 Rev. 1 - 2
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DMN5L06DW
0.8
10
VDS = 10V ID = 1mA Pulsed
NEW PRODUCT
VGS(th), GATE THRESHOLD VOLTAGE (V)
0.7 0.6
VGS = 10V Pulsed
TA = 125° C TA = 150° C
TA = 85° C
0.5 0.4 0.3 0.2 0.1 0 -75 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature
TA = 25° C TA = 0° C TA = -25° C
1
TA = -55° C
0.1 0.001
0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current
1
10
VGS = 5V Pulsed
8 7
TA = 125° C TA = 150° C TA = 85° C
TA = 25° C Pulsed
6 5
1
TA = -55° C TA = 25° C TA = 0° C TA = -25° C
4 3 2 1
ID = 280mA ID = 140mA
0.1 0.001 0.01 0.1 1
0 0 5 10 15 20
ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
2.5 2.3 2.1 1.9
ID = 280mA
VGS = 10V Pulsed
VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage
1
VGS = 0V Pulsed
IDR, REVERSE DRAIN CURRENT (A)
TA = 150° C
0.1
TA = 125° C
1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150
ID = 140mA
TA = 85° C
0.01
TA = 25° C
TA = -25° C TA = -55° C
0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1
Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature
DS30751 Rev. 1 - 2
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DMN5L06DW
|Yfs|, FORWARD TRANSFER ADMITTANCE (S)
1
1
VDS = 10V Pulsed TA = -25° C
TA = -55° C
NEW PRODUCT
IDR, REVERSE DRAIN CURRENT (A)
VGS = 10V
0.1
TA = 0° C
0.1
TA = 25° C
VGS = 0V
0.01
TA = 85° C TA = 125° C TA = 150° C
TA = 25°C Pulsed
0.001 0 0.5 VSD, SOURCE-DR.