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DMN5L06DW Dataheets PDF



Part Number DMN5L06DW
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description Dual N-Channel MOSFET
Datasheet DMN5L06DW DatasheetDMN5L06DW Datasheet (PDF)

DMN5L06DW Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3) S2 G2 SOT-363 A D2 Dim A S1 Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° .

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DMN5L06DW Lead-free Green DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features · · · · · · · · · Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 2) “Green” Device (Note 3) S2 G2 SOT-363 A D2 Dim A S1 Min 0.10 1.15 2.00 0.30 1.80 ¾ 0.90 0.25 0.10 0° Max 0.30 1.35 2.20 0.40 2.20 0.10 1.00 0.40 0.25 8° G1 B B C D1 C D F H M 0.65 Nominal G H K Mechanical Data · · · · · · · · Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish ¾ Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: Date Code and Type Code, See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) J K L M a J D F L All Dimensions in mm D2 G1 S1 S2 G2 D1 Maximum Ratings Drain-Source Voltage @ TA = 25°C unless otherwise specified Symbol VDSS VDGR Continuous Pulsed Continuous Pulsed VGSS ID IDM Pd RqJA Tj, TSTG Value 50 50 ±20 ±40 280 1.5 200 833 -55 to +150 Units V V V mA A mW °C/W °C Characteristic Drain-Gate Voltage RGS £ 1.0MW Gate-Source Voltage Drain Current (Note 1) Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30751 Rev. 1 - 2 1 of 5 www.diodes.com DMN5L06DW ã Diodes Incorporated NEW PRODUCT Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Source-Drain Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance @ TA = 25°C unless otherwise specified Symbol BVDSS @ TC = 25°C @ TC = 125°C IDSS IGSS VGS(th) RDS (ON) ID(ON) |Yfs| VSD Ciss Coss Crss Min 50 ¾ ¾ 0.49 ¾ ¾ 0.5 200 0.5 ¾ ¾ ¾ Typ ¾ ¾ ¾ ¾ 1.6 2.2 1.0 ¾ ¾ ¾ ¾ ¾ Max ¾ 0.1 500 ±20 1.2 3 4 ¾ ¾ 1.4 50 25 5.0 Unit V µA nA V W A mS V pF pF pF VDS = 25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = 10mA VDS = 50V, VGS = 0V VGS = ±20V, VDS = 0V VDS = VGS, ID = 250mA VGS = 2.7V, ID = 0.2A, VGS = 1.8V, ID = 50mA VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA 1.5 VGS = 10V 8V 6V 5V 4V 3V 1 8V 10V 6V VDS = 10V Pulsed 1.2 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 5V 4V 0.9 3V 0.1 TA = 150° C TA = 125° C TA = 85° C 0.6 0.01 TA = 25° C TA = 0° C TA = -25° C TA = -55° C 0.3 0 0 1 2 3 4 5 0.001 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics DS30751 Rev. 1 - 2 2 of 5 www.diodes.com DMN5L06DW 0.8 10 VDS = 10V ID = 1mA Pulsed NEW PRODUCT VGS(th), GATE THRESHOLD VOLTAGE (V) 0.7 0.6 VGS = 10V Pulsed TA = 125° C TA = 150° C TA = 85° C 0.5 0.4 0.3 0.2 0.1 0 -75 -50 -25 0 25 50 75 100 125 150 Tch, CHANNEL TEMPERATURE (°C) Fig. 3 Gate Threshold Voltage vs. Channel Temperature TA = 25° C TA = 0° C TA = -25° C 1 TA = -55° C 0.1 0.001 0.1 0.01 ID, DRAIN CURRENT (A) Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current 1 10 VGS = 5V Pulsed 8 7 TA = 125° C TA = 150° C TA = 85° C TA = 25° C Pulsed 6 5 1 TA = -55° C TA = 25° C TA = 0° C TA = -25° C 4 3 2 1 ID = 280mA ID = 140mA 0.1 0.001 0.01 0.1 1 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Fig. 5 Static Drain-Source On-Resistance vs. Drain Current 2.5 2.3 2.1 1.9 ID = 280mA VGS = 10V Pulsed VGS, GATE SOURCE VOLTAGE (V) Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage 1 VGS = 0V Pulsed IDR, REVERSE DRAIN CURRENT (A) TA = 150° C 0.1 TA = 125° C 1.7 1.5 1.3 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 ID = 140mA TA = 85° C 0.01 TA = 25° C TA = -25° C TA = -55° C 0.001 0 0.5 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Reverse Drain Current vs. Source-Drain Voltage 1 Tch, CHANNEL TEMPERATURE (° C) Fig. 7 Static Drain-Source On-State Resistance vs. Channel Temperature DS30751 Rev. 1 - 2 3 of 5 www.diodes.com DMN5L06DW |Yfs|, FORWARD TRANSFER ADMITTANCE (S) 1 1 VDS = 10V Pulsed TA = -25° C TA = -55° C NEW PRODUCT IDR, REVERSE DRAIN CURRENT (A) VGS = 10V 0.1 TA = 0° C 0.1 TA = 25° C VGS = 0V 0.01 TA = 85° C TA = 125° C TA = 150° C TA = 25°C Pulsed 0.001 0 0.5 VSD, SOURCE-DR.


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