RB215T-90

RB215T-90 Diodes Schottky barrier diode RB215T-90 zApplications General rectification (Common cathode dual chip) zExternal dimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 zStructure 1.2 1.3 5.0±0.2 zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability ① 8.0±0.2 12.0±0.2 zConstruction Silicon epitaxial planar 0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5 ROHM : ＴO220FN ① Manufacture Date zAbsolute maximum ratings (Ta=25°C) Parameter 13.5MIN 15.0±0.4 　 0.2 8.0 Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak (60Hz・1cyc) (*1) Junction temperature Storage temperature (*1)Tc=100℃max Per chip : Io/2 zElectrical characteristic (Ta=25°C) Parameter Symbol Symbol VRM VR Io IFSM Tj Tstg Limits 90 90 20 100 150 -40 to +150 Unit V V A A ℃ ℃ Forward characteristics Reverse characteristics Thermal impedance VF IR θjc Min. - Typ. - Max. 0.75 400 1.75 Unit V µA ℃/W Conditions IF=10A VR=90V junction to case 1/3 RB215T-90 Diodes zElectrical characteristic curves 100 FORWARD CURRENT:IF(mA) 1000000 100000 REVERSE CURRENT:IR(uA) Ta=150℃ Ta=125℃ Ta=75℃ 10000 f=1MHz CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 Ta=150℃ Ta=125℃ 10000 1000 100 10 1 0.1 1000 1 Ta=75℃ 0.1 Ta=25℃ 100 Ta=-25℃ Ta=25℃ Ta=-25℃ 10 0.01 0 100 200 300 400 500 600 700 800 900 1000 1 0 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 0 10 20 REVERSE VOLTAGE:VR(V) VR-Ct...