RB520CS-30

Schottky barrier diode RB520CS-30 zApplications Low current rectification z Dimensions (Unit : mm) zFeatures 1) Ultra Small power mold type. (VMN2) 2) Low IR 3)High reliability. zConstruction Silicon epitaxial planar 0.45 0.45 0.5 z Land size figure (Unit : mm) 0.55 VMN2 zStructure zTaping specifications (Unit : mm) zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (DC) Average rectiied forward current Forward current surge peak （60Hz/1cyc） Junction temperature Storage temperature Symbol VR Io IFSM Tj Tstg Limits 30 100 500 150 -40 to +150 Unit V mA mA °C °C zElectrical characteristics (Ta=25°C) Parameter Forward voltage Reverse current Symbol Min. Typ. Max. VF - - 0.45 IR - - 0.5 Unit Conditions V IF=10mA µA VR=10V www.rohm.com ©2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.D RB520CS-30 　 zElectrical characteristic curves FORWARD CURRENT:IF(mA) 1000 100 Ta=125°C Ta=75°C 10 1 Ta=-25°C 0.1 Ta=25°C 0.01 0.001 0 100 200 300 400 500 FORWARD VOLTAGE : V F(mV) VF-IF CHARACTERISTICS 600 REVERSE CURRENT:IR(nA) 1000000 100000 10000 1000 100 10 1 0 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 10 20 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 100 10 1 0 Data Sheet f=1MHｚ 5 10 15 REVERSE VOLTAGE : VR(V) VR-Ct CHARACTERISTICS 20 FORWARD VOLTAGE:VF(mV) CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(nA) 370 1000 20 360 Ta=25°C IF=10mA n=30pcs 900 800 Ta=25°C VR=10V n=30pcs 19 18...