SBR0130S3 SBR0130S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a sin...
SBR0130S3 SBR0130S5
Using state-of-the-art SBR IC process technology, the following features are made possible in a single device:
Major ratings and characteristics Characteristics Values
IF(AV) Rectangular Waveform VRRM
[email protected], TJ=75oC TJ (operating/storage) 0.10 30 0.37 -65 to 125
Units
A V V, typ o C
ELECTRICAL: * Low Forward Voltage Drop * Low Reverse Leakage * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability o * 125 C Operating Junction Temperature
MECHANICAL: * Molded Plastic SOD-323, SOD-523 packages
SBR0130S3
Cathode Mark A
SBR0130S5
A
B
B
SOD-523
SOD-323
Di C D C G D E H F G H 0.25 1.15 0.10 0.85 0.20 0.40 1.45 0.18 1.05 D A B Min 2.30 1.60 Max 2.70 1.80 C
Di A B C D E F 0.10 0.40 F E
Min 1.60 0.8 0.70
Max 1.80 1.0 0.85
0.35 (typ) 0.30 (typ) 0.70 (typ)
All Dimensions in mm
All Dimensions in mm
E F
SOD-323
SOD-523
___________________________________________________________________________________________________ www.apdsemi.com Version 2.0 - April 2006 1
SBR0130S3 SBR0130S5
Maximum Ratings and Electrical Characteristics (at 25oC unless otherwise specified)
SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR - 20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Instantaneous Forward Voltage o IF = 100mA; TJ = 25 C IF = 100mA; TJ = 75 C Maximum Reverse Current at Rated VRM TJ = 25 C
o TJ = 75 C o o
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