SBR130S3

SBR130S3 Using state-of-the-art SBR IC process technology, the following features are made possible in a single device: Major ratings and characteristics Values Characteristics IF(AV) Rectangular Waveform VRRM VF@1A, TJ=75oC TJ (operating/storage) 1.0 * 30 0.38 -65 to 125 Units A V V, typ o C A B MECHANICAL: * Molded Plastic SOD-323 package SOD-323 Cathode Mark G Di A H B C D Min 2.30 1.60 0.25 1.15 0.10 0.85 0.20 Max 2.70 1.80 0.40 1.45 0.18 1.05 0.10 0.40 *Note: Device monuted on a glass epoxy board, Board size: 50mm x 50m, Land size: 6mm x 6mm ELECTRICAL: * Low Forward Voltage Drop * Low Reverse Leakage * Reliable High Temperature Operation * Super Barrier Design * Softest, fast switching capability o * 125 C Operating Junction Temperature E C D F E G F H All Dimensions in mm Maximum Ratings and Electrical Characteristics (at 25oC unless otherwise specified) SYMBOL DC Blocking Voltage Working Peak Reverse Voltage Peak Repetitive Reverse Voltage Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle Peak Forward Surge Current - 1/2 60hz Instantaneous Forward Voltage o IF = 0.7A; TJ = 25 C IF = 1A; TJ = 25 C o IF = 0.7A; TJ = 75 C o UNITS 30 Volts VRM VRWM VRRM IO (1) IFSM Typ --0.41 --Typ ----- 1 18 Max 0.41 --0.36 Max 0.1 2 -65 to +125 Amps Amps VF Volts Maximum Reverse Current at Rated VRM TJ = 25oC o TJ = 75 C IR (2) TJ mA mA o Operating and Storage Junction Temperature (2) Pulse width < 300 uS, Duty cycle < 2% C (1) We recom...