2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS
TO-92 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL S...
2N5961 2N5962 2N5963 SILICON
NPN TRANSISTORS
TO-92 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon
NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
VEBO
Continuous Collector Current
IC
Power Dissipation
PD
Power Dissipation (TC=25°C)
PD
Operating and Storage Junction Temperature
TJ, Tstg
2N5961 2N5962 2N5963
60
45
30
60
45
30
7.0
50
625
1.5
-65 to +150
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N5961
2N5962
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
ICBO
VCB=Rated VCBO
- 2.0
- 2.0
ICBO
VCB=Rated VCBO, TA=65°C
- 50
- 50
IEBO
VEB=5.0V
- 1.0
- 1.0
BVCBO
IC=10μA
60 -
45 -
BVCEO
IC=5.0mA
60 -
45 -
BVEBO
IE=10μA
7.0 -
7.0 -
VCE(SAT) IC=10mA, IB=0.5mA, PW=300μs
-
0.2
- 0.2
VBE(ON)
VCE=5.0V, IC=1.0mA
0.5 0.7
0.5 0.7
hFE
VCE=5.0V, IC=10μA
100 -
450 -
hFE
VCE=5.0V, IC=100μA
120 -
500 -
hFE
VCE=5.0V, IC=1.0mA
135 -
550 -
hFE
VCE=5.0V, IC=10mA
150 700
600 1.4K
hfe
VCE=5.0V, IC=10mA, f=1.0kHz
150 1.0K
600 2.0K
fT
VCE=5.0V, IC=10mA, f=100MHz 100 -
100 -
Cob
VCB=5.0V, IE=0
- 4.0
- 4.0
Cib
VEB=0.5V, IC=0
- 6.0
- 6.0
2N5963 MIN MAX
- 2.0 - 50 - 1.0 30 30 ...