2N5963

2N5961 2N5962 2N5963 SILICON NPN TRANSISTORS TO-92 CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5961 series devices are epoxy molded silicon NPN transistors, manufactured by the epitaxial planar process, designed for applications requiring extremely high gain (hFE) and low noise. MARKING: FULL PART NUMBER MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Continuous Collector Current IC Power Dissipation PD Power Dissipation (TC=25°C) PD Operating and Storage Junction Temperature TJ, Tstg 2N5961 2N5962 2N5963 60 45 30 60 45 30 7.0 50 625 1.5 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N5961 2N5962 SYMBOL TEST CONDITIONS MIN MAX MIN MAX ICBO VCB=Rated VCBO - 2.0 - 2.0 ICBO VCB=Rated VCBO, TA=65°C - 50 - 50 IEBO VEB=5.0V - 1.0 - 1.0 BVCBO IC=10μA 60 - 45 - BVCEO IC=5.0mA 60 - 45 - BVEBO IE=10μA 7.0 - 7.0 - VCE(SAT) IC=10mA, IB=0.5mA, PW=300μs - 0.2 - 0.2 VBE(ON) VCE=5.0V, IC=1.0mA 0.5 0.7 0.5 0.7 hFE VCE=5.0V, IC=10μA 100 - 450 - hFE VCE=5.0V, IC=100μA 120 - 500 - hFE VCE=5.0V, IC=1.0mA 135 - 550 - hFE VCE=5.0V, IC=10mA 150 700 600 1.4K hfe VCE=5.0V, IC=10mA, f=1.0kHz 150 1.0K 600 2.0K fT VCE=5.0V, IC=10mA, f=100MHz 100 - 100 - Cob VCB=5.0V, IE=0 - 4.0 - 4.0 Cib VEB=0.5V, IC=0 - 6.0 - 6.0 2N5963 MIN MAX - 2.0 - 50 - 1.0 30 30 ...