2N7002M

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate MOSFET 2N7002M DESCRIPTION High cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. 1. GATE 2. SOURCE 3. DRAIN MOSFET( N-Channel ) D WBFBP-03B (1.2×1.2×0.5) unit: mm TOP G D S BACK S G FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. APPLICATION N-Channel Enhancement Mode Field Effect Transistor www.DataSheet4U.com For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: 72 D 72 G S MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol VDS ID PD RθJA TJ Tstg Drain-Source voltage Drain Current Power Dissipation Thermal Resistance. Junction to Ambient Air Junction Temperature Storage Temperature Parameter Value 60 115 150 625 150 -55-150 Units V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃ Parameter Drain-Source Breakdown Voltage Gate-Threshold Voltage* Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current* Drain-Source On-Resistance* Drain-S...