CFB0301

High Dynamic Range Low Noise GaAs FET August 2006 - Rev 03-Aug-06 CFB0301 Features Low-Noise Figure from 0.8 to 2.0 GHz High Gain High Intercept Point Highly Stable Easily Matched to 50 70 mil Package Applications Cellular Base Stations PCS Base Stations Industrial Data Networks Description Celeritek’s CFB0301 is a high performance GaAs MESFET with 600 µm gate width and 0.25 µm gate length. The low noise figure and high intercept point of this device makes it well suited for use as the low-noise amplifier of the base station receiver in PCS, Japanese PHS, AMPS, GSM and other communications systems. The CFB0301 is in an industry-standard 70 mil package. It is surface mountable and available in tape and reel. Electrical Specifications (TA = 25°C, 2 GHz) Parameters Conditions Min Typ Standard Deviation 4 Max Units Vd = 2V, Id = 25 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Vd = 4V, Id = 30 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Vd = 4V, Id = 70 mA Noise Figure 2 Associated Gain 2 Pout 1, 3 IP3 3 Id 3 Transconductance Saturated Drain Current Pinchoff Voltages Thermal Resistance @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 0.6 16 15.0 24 35 0.7 17 20.5 30 56 0.8 17 21 34 77 70 120 -2.5 140 150 -1.3 200 180 -0.5 0.08 0.4 0.4 0.9 0.9 dB dB dBm dBm mA dB dB dBm dBm mA dB dB dBm dBm mA mho mA V °C/W @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 @ Noise Figure P-1 +5 dBm POUT/Tone @ P-1 Vds = 2 V, Vgs = 0 V Vds = 2 V, Vgs = 0 V Vds = 2 V, Ids = 1 mA @ ...