MMBF170LT1

MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms) Drain Current − Continuous − Pulsed Symbol VDSS VDGS VGS VGSM ID IDM Value 60 60 ± 20 ± 40 0.5 0.8 Unit Vdc Vdc Vdc Vpk Adc 1 Unit http://onsemi.com 500 mA, 60 V RDS(on) = 5 W N−Channel 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1.) TA = 25°C Derate above 25°C www.DataSheet4U.com Symbol PD Max 225 1.8 2 mW mW/°C °C/W °C 1 2 3 Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0  0.75  0.062 in. RqJA TJ, Tstg 556 −55 to +150 SOT−23 CASE 318 STYLE 21 MARKING DIAGRAM 6Z W 6Z W = Device Code = Work Week PIN ASSIGNMENT 3 Drain Gate 1 2 Source ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2004 1 February, 2004 − Rev. 4 Publication Order Number: MMBF170LT1/D MMBF170LT1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage (VGS = 0, ID = 100 mA) Gate−Body Leakage Current, Forward (VGSF = 15 Vdc, VDS = 0) ON CHARACTERISTICS (Note 1) Gate Threshold Voltage (VDS = VGS, ID = 1.0 mA) Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 200 mA) On−State Drain Current (VDS...