HI32C

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9002 Issued Date : 1994.03.02 Revised Date : 2002.01.17 Page No. : 1/3 HI32C PNP EPITAXIAL PLANAR TRANSISTOR Description The HI32C is designed for use in general purpose amplifier and low speed switching applications. Absolute Maximum Ratings (Ta=25°C) TO-251 Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 °C Junction Temperature .................................................................................................... +150 °C Maximum Power Dissipation Total Power Dissipation (Tc=25°C) ...................................................................................... 15W Maximum Voltages and Currents BVCBO Collector to Base Voltage.................................................................................... -100 V BVCEO Collector to Emitter Voltage................................................................................. -100 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current ............................................................................................................. -3 A www.DataSheet4U.com Characteristics (Ta=25°C) Symbol BVCBO BVCEO ICES ICEO IEBO *VCE(sat) *VBE(on) *hFE1 *hFE2 fT Min. -100 -100 25 10 3 Typ. Max. -20 -50 -1 -1.2 -1.8 50 Unit V V uA uA mA V V Test Conditions I...