CFH2162-P3

CFH2162-P3 QNX@š@RNP@gh¡ KSV@‡b“@pžˆ˜@g„a™@fet www.DataSheet4U.com mŒ“ŒŸ@b˜„‡…„”‡L@i”†N@QPWYU@r†‘’ˆ @r‡NL@h›™š”L@tˆŸ„™@WWPYY tˆ’Z@RXQNYXXNTVPP@@f„ŸZ@RXQNYXXNTVQU@@žžžN“Œ“ŒŸ…˜„‡…„”‡N†“ ÐRPPU@mŒ“ŒŸ@b˜„‡…„”‡L@i”†N CFH2162-P3 Advanced Product Information May 1996 (1 of 2) Features t High Gain t +36 dBm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +33 dBm with 30 dBc Third Order Products Applications t PCS/PCN Base Stations t Wireless Local Loop 1.8 to 2.0 GHz +36 dBm Power GaAs FET Package Diagram G S S D Description The CFH2162-P3 is a high-gain, linear FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +36 dBm. The device is easily matched and provides excellent linearity at 4 Watts. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in a power flange package. Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 1.95 GHz. Parameters Conditions Min Typ Max Units Absolute Maximum Ratings Parameter Symbol Rating Vd = 10V, Id = 1100 mA (Quiescent) P-1dB G-1 dB 3rd Order Products (1) Efficiency @ P1dB Vd = 8V, Id = 1300 mA (Quiescent) P-1dB G-1 dB Parameters Conditions 36.0 37.0 13.0 14.0 30 — — — Min — — — — — — Max dBm dB dBc % dBm dB Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Channel Temperatur...