CFK2162-P3

CFK2162-P3 Product Specifications July 1997 (1 of 4) Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +29 dBm with 30 dBc Third Order Products t Surface Mount SO-8 Power Package Applications t PCS/PCN Base Stations and Terminals t Wireless Local Loop Description The CFK2162-P3 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent linearity at 2 Watts. Manufactured in Celeritek’s proprietary 8 7 6 5 D GND GND D 1.8 to 2.0 GHz +34 dBm Power GaAs FET Package Diagram G GND GND G 1 2 3 4 Back Plane is Source power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques. Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 1.95 GHz. Parameters www.DataSheet4U.com Absolute Maximum Ratings Parameter Symbol Rating Conditions Min Typ Max Units Vd = 8V, Id = 800 mA (Quiescent) P-1dB SSG 3rd Order Products (1) Efficiency @ P1dB Vd = 5V, Id = 350 mA (Quiescent) P-1dB SSG Vd = 5V, Id = 1200 mA (Quiescent) P-1dB SSG 33.0 34.0 13.0 14.0 26 — — — 30 43 30.0 11.0 — — — — — — dBm dB dBc % dBm dB Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Chan...