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CFK2162-P5 Dataheets PDF



Part Number CFK2162-P5
Manufacturers Celeritek
Logo Celeritek
Description Power GaAs FET
Datasheet CFK2162-P5 DatasheetCFK2162-P5 Datasheet (PDF)

CFK2162-P5 Product Specifications July 1997 (1 of 4) Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +29 dBm with 30 dBc Third Order Products t Surface Mount SO-8 Power Package Applications t ISM Band Base Stations and Terminals t PCS/PCN Base Stations and Terminals t Wireless Local Loop Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium.

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CFK2162-P5 Product Specifications July 1997 (1 of 4) Features t High Gain t +34 dBm Power Output t Proprietary Power FET Process t >45% Linear Power Added Efficiency t +29 dBm with 30 dBc Third Order Products t Surface Mount SO-8 Power Package Applications t ISM Band Base Stations and Terminals t PCS/PCN Base Stations and Terminals t Wireless Local Loop Description The CFK2162-P5 is a high-gain FET intended for driver amplifier applications in high-power systems, and output stage usage in medium power applications at power levels up to +34 dBm. The device is easily matched and provides excellent 2.3 to 2.5 GHz +34 dBm Power GaAs FET Package Diagram G GND GND G 1 2 3 4 Back Plane is Source 8 7 6 5 D GND GND D linearity at 2 Watts. Manufactured in Celeritek’s proprietary power FET process, this device is assembled in an industry standard surface mount SO-8 power package that is compatible with high volume, automated board assembly techniques. Specifications (TA = 25°C) The following specifications are guaranteed at room temperature in Celeritek test fixture at 2.5 GHz. Parameters www.DataSheet4U.com Absolute Maximum Ratings Parameter Symbol Rating Conditions Min Typ Max Units Vd = 8V, Id = 800 mA (Quiescent) P-1dB SSG 3rd Order Products (1) Efficiency @ P1dB Vd = 5V, Id = 350 mA (Quiescent) P-1dB SSG Vd = 5V, Id = 1200 mA (Quiescent) P-1dB SSG 33.0 34.0 11.0 12.0 26 — — — 30 40 30.0 9.0 — — — — — — dBm dB dBc % dBm dB Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Dissipation Channel Temperature Storage Temperature VDS VGS IDS PT TCH TSTG 12V (3) -5V Idss 10W 175°C -65°C to +175°C SO-8 Power Package Physical Dimensions — — 32.5 10.0 — — dBm dB Parameters Conditions Min Typ Max Units gm Idss Vp BVGD (3) ΘJL (2) Vds = 2.0V, Vgs = 0V Vds = 2.0V, Vgs = 0V Vds = 3.0V, Ids = 65 mA Igd = 6.5 mA @150°C TCH — — — 18 — 1700 2.8 -1.8 20 10 — — — — mS A Volts Volts °C/W Notes: 1. Sum to two tones with 1 MHz spacing = 29 dBm. 2. See thermal considerations information on page 4. 3. Max (+Vd) and (-Vg) under linear operation. Max potential difference across the device in RF compression (2Vd + |-Vg|) not to exceed the minimum breakdown voltage (Vbr) of +18V. 3236 Scott Boulevard Santa Clara, California 95054 Phone: (408) 986-5060 Fax: (408) 986-5095 CFK2162-P5 Typical Scattering Parameters Frequency (GHz) Mag S11 Ang Mag S21 Ang Product Specifications - July 1997 (2 of 4) (TA = 25°C, Vds = 5 V, Ids = 350 mA) Mag S12 Ang Mag S22 Ang 0.6 1.0 1.8 1.9 1.5 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 3.0 3.5 4.0 0.6 1.0 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 3.0 3.5 4.0 0.6 1.0 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 3.0 3.5 4.0 0.946 0.946 0.927 0.922 0.938 0.918 0.914 0.912 0.914 0.914 0.918 0.921 0.923 0.941 0.957 0.94 0.95 0.951 0.935 0.931 0.929 0.925 0.924 0.92 0.923 0.923 0.927 0.93 0.947 0.961 0.945 0.941 0.947 0.93 0.927 0.923 0.919 0.917 0.921 0.921 0.925 0.927 0.933 0.944 0.96 0.942 -162.45 -176.06 172.61 1.


CFK2162-P5 CFK2162-P5 CHV2707-QJ


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