2.0-22.0 GHz GaAs MMIC
August 2006 - Rev 02-Aug-06
2.0 to 22.0 GHz
Advanced Product Information
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Small Size: 45 x 92 mils
High Gain: 11.5 dB, Nom
Medium Power: +25 dBm, Typ P1dB @14 GHz
Directly Cascadable – Fully Matched
Single Bias Operation
Silicon Nitride Passivation
Specifications (TA = 25°C, Vdd = 8V)1
Small Signal Gain
Gain Variation (-40°C to +85°C)
Input Return Loss
Output Return Loss
Power Output (@1 dB Gain Compression) 1
P1dB Variation (over operating frequency)
P1dB Variation (-40°C to +85°C)
Saturated Output Power
Second Order Intercept Point @ 10 GHz
Third Order Intercept Point @ 10 GHz
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 3).
2. Stability factor measured on-wafer.
Absolute Maximum Ratings
Continuous Power Dissipation
Operating Backside Temperature
7V (min.) / 9V (max.)
-50°C to +150°C
-40 to (see note 2)°C
Notes: 1. Operation outside these limits can cause permanent damage.
2. Calculation maximum operating temperature:
Tmax = 175–(Pdis [W] x 33.0) [°C].
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutec-
tic die attach: Preform: AuSn (80% Au, 20% Sn); Stage
Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1
min or less.
Wire Bonding: Wire Size: 0.7 to 1.0 mil in diameter (pre-
stressed); Thermocompression bonding is preferred over
thermosonic bonding. For thermocompression bonding:
Stage Temperature: 250°C; Bond Tip Temperature: 150°C;
Bonding Tip Pressure: 18 to 40 gms depending on size of
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
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Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.
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