CMM0014-BD

2.0-22.0 GHz GaAs MMIC Power Amplifier August 2006 - Rev 02-Aug-06 CMM0014-BD Chip Diagram 2.0 to 22.0 GHz GaAs MMIC Power Amplifier Advanced Product Information August 2004 (1 of 3) Features Small Size: 45 x 92 mils High Gain: 11.5 dB, Nom Medium Power: +25 dBm, Typ P1dB @14 GHz Directly Cascadable – Fully Matched Unconditionally Stable Single Bias Operation Bias Control pHEMT Technology Silicon Nitride Passivation Specifications (TA = 25°C, Vdd = 8V)1 Parameters www.DataSheet4U.com Units Min Typ Max Frequency Range Small Signal Gain Gain Flatness Gain Variation (-40°C to +85°C) Input Return Loss Output Return Loss Power Output (@1 dB Gain Compression) 1 P1dB Variation (over operating frequency) P1dB Variation (-40°C to +85°C) Saturated Output Power Second Order Intercept Point @ 10 GHz Third Order Intercept Point @ 10 GHz Noise Figure Current Thermal Resistance Stability 2 GHz dB ±dB ±dB dB dB dBm dBm ±dBm dBm dBm dBm dB mA °C/W 2.0 10.0 22.0 13.5 0.8 0.35 -10.0 -9.0 22.5 4.5 0.25 29.0 48.0 37.5 250 Unconditionally Stable 295 7.5 340 33.0 24.0 Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 3). 2. Stability factor measured on-wafer. Absolute Maximum Ratings Parameter Rating Die Attach and Bonding Procedures 7V (min.) / 9V (max.) 350 mA 2.8 W +20 dBm -50°C to +150°C +175°C -40 to (see note 2)°C Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Sta...