CMM0016-BD
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CMM0016-BD
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CMM0016-BD 2.0 to 20.0 GHz GaAs MMIC 1W Power Amplifier
Advanced Product Information August 2004 Features ❏ Small Size: 2.32 x 1.30 x 0.076 mm ❏ Integrated On-Chip DC Blocking ❏ Single Bias Operation ❏ Directly Cascadable – Fully Matched ❏ Unconditionally Stable ❏ P1dB: 29 dBm, Typ. @ 18 GHz ❏ Linear Gain: 9.5 dB, Typ. @ 18 GHz ❏ pHEMT Technology ❏ Silicon Nitride Passivation
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Chip Diagram
Units: mm
Specifications (TA = 25°C, Vdd = 12V) 1
Parameters Units Min Typ Max
Frequency Range Linear Gain Gain Flatness Power Output: 2-18 GHz (@1 dB Gain Compression) Power Output: 2-20 GHz (@1 dB Gain Compression) P1dB Variation (over operating frequency) Saturated Output Power: 2-18 GHz Saturated Output Power: 2-20 GHz Input Return Loss Output Return Loss Current Thermal Resistance
GHz dB ±dB dBm dBm dBm dBm dBm dB dB mA °C/W
2.0 8.5 28.5 26.5
20.0 12.5 1.5
5.0 29.5 27.5 -10.0 -10.0 730 15.7
650
690
Stability 2
Unconditionally Stable
Notes: 1. Tested on Celeritek Connectorized evaluation board (standard assembly condition detailed on page 4). 2. Stability factor measured on-wafer.
Absolute Maximum Ratings 1
Parameter Rating
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: Au...