CMM1110-BD

2.0-18.0 GHz GaAs MMIC Low Noise Amplifier January 2007 - Rev 29-Jan-07 CMM1110-BD Chip Device Layout Features Self Bias Architecture 16.0 dB Small Signal Gain 2.5 dB Noise Figure +13.0 dBm P1dB Compression Point 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 2.0-18.0 GHz GaAs MMIC low noise amplifier has a small signal gain of 16.0 dB with a noise figure of 2.5 dB across the band. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon optical beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold www.DataSheet4U.com metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for fiber optic, microwave radio, military, space, telecom infrastructure, test instrumentation and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 110 mA +20 dBm -65 to +165 OC -55 to MTTF Table 1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Fl...