GaAs MMIC Low Noise Amplifier
2.0-6.0 GHz GaAs MMIC Low Noise Amplifier
August 2006 - Rev 02-Aug-06
CMM1200
Chip Diagram
2.0 to 6.0 GHz GaAs MMIC Lo...
Description
2.0-6.0 GHz GaAs MMIC Low Noise Amplifier
August 2006 - Rev 02-Aug-06
CMM1200
Chip Diagram
2.0 to 6.0 GHz GaAs MMIC Low-Noise Amplifier
Advanced Product Information May 2005 V1.5
(1 of 5)
Features Small Size: 1.60 x 1.55 x 0.076 mm Integrated On-Chip Drain Bias Coil Integrated On-Chip DC Blocking Single Bias Operation Directly Cascadable – Fully Matched, Novel Feedback & Distributed Amplifier Design P1dB: 15.5 dBm @ 6 GHz, Typ. High Linear Gain: 17.5 dB Typ. Noise Figure: 3.3 dB Typ. @ 6 GHz pHEMT Technology Silicon Nitride Passivation Specifications (TA = 25°C, Vdd = 5V) 1
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Parameters
Units
Min
Typ
Max
Frequency Range Linear Gain Gain Variation (over operating frequency) Power Output (@1 dB Gain Compression) P1dB Variation (over operating frequency) Saturated Output Power Third Order Intercept Point (@ 6 GHz) Second Order Intercept Point (@ 6 GHz) Noise Figure (@6 GHz) Input Return Loss 2 Output Return Loss 2 Current Thermal Resistance Stability
Notes: 1. Tested on Celeritek connectorized evaluation board. 2. Measured on wafer.
GHz dB ±dB dBm dBm dBm dBm dBm dB dB dB mA °C/W
2.0 16.0 14.0 19.0
6.0 17.5 2.0 15.5 1.0 23.0 25.5 41.0 3.3
85 Unconditionally Stable
100 34.0
3.8 -9.5 -12.0 115
Absolute Maximum Ratings 1
Parameter Rating
Die Attach and Bonding Procedures
Die Attach: Eutectic die attach is recommended. For eutectic die attach: Preform: AuSn (80% Au, 20% Sn); Stage Temperature: 290°C, ±5°C; Handling Tool: Tweezers; Time: 1 min or le...
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