CMM1200-BD

CMM1200-BD RNP@š@VNP@gh¡ g„a™@mmic@lžMnŒ™ˆ@a“–’Œ‰ˆ˜ www.DataSheet4U.com mŒ“ŒŸ@b˜„‡…„”‡L@i”†N@QPWYU@r†‘’ˆ @r‡NL@h›™š”L@tˆŸ„™@WWPYY tˆ’Z@RXQNYXXNTVPP@@f„ŸZ@RXQNYXXNTVQU@@žžžN“Œ“ŒŸ…˜„‡…„”‡N†“ ÐRPPU@mŒ“ŒŸ@b˜„‡…„”‡L@i”†N CMM1200-BD 2.0 to 6.0 GHz GaAs MMIC Low-Noise Amplifier Advanced Product Information May 2005 V1.5 (1 of 5) Chip Diagram Features ❏ Small Size: 1.60 x 1.55 x 0.076 mm ❏ Integrated On-Chip Drain Bias Coil ❏ Integrated On-Chip DC Blocking ❏ Single Bias Operation ❏ Directly Cascadable – Fully Matched, Novel Feedback & Distributed Amplifier Design ❏ P1dB: 15.5 dBm @ 6 GHz, Typ. ❏ High Linear Gain: 17.5 dB Typ. ❏ Noise Figure: 3.3 dB Typ. @ 6 GHz ❏ pHEMT Technology ❏ Silicon Nitride Passivation Specifications (TA = 25°C, Vdd = 5V) 1 Parameters Units Min Typ Max Frequency Range Linear Gain Gain Variation (over operating frequency) Power Output (@1 dB Gain Compression) P1dB Variation (over operating frequency) Saturated Output Power Third Order Intercept Point (@ 6 GHz) Second Order Intercept Point (@ 6 GHz) Noise Figure (@6 GHz) Input Return Loss 2 Output Return Loss 2 Current Thermal Resistance Stability Notes: 1. Tested on Celeritek connectorized evaluation board. 2. Measured on wafer. GHz dB ±dB dBm dBm dBm dBm dBm dB dB dB mA °C/W 2.0 16.0 14.0 19.0 6.0 17.5 2.0 15.5 1.0 23.0 25.5 41.0 3.3 85 Unconditionally Stable 100 34.0 3.8 -9.5 -12.0 115 Absolute Maximum Ratings 1 Parameter Rating Die Attach and Bonding Procedures Die Attach: Eutectic die...