M2035S & M2045S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES • Guardring fo...
M2035S & M2045S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier
Schottky Rectifier
FEATURES Guardring for overvoltage protection Lower power losses, high efficiency Low forward voltage drop High forward surge capability High frequency operation
3 2 1
1 2 CASE
TO-220AB
Solder Dip 260 °C, 40 seconds Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, free-wheeling diodes, dc-to-dc converters or polarity protection applications. MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs maximum
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MAJOR RATINGS AND CHARACTERISTICS
IF(AV) VRRM
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20 A 35 V, 45 V 200 A 0.55 V 150 °C
IFSM VF at IF = 20 A Tj max.
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz Voltage rate of change (rated VR) Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM IRRM dv/dt TJ, TSTG M2035S 35 20 200 2.0 10000 - 55 to + 150 M2045S 45 UNIT V A A A V/µs °C
Document Number 88953 24-Jul-06
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