RB225T-60

Data Sheet Schottky barrier diode RB225T-60 Applications  Dimensions (Unit : mm) Switching power supply Features 1) Cathode common type. 10.0±0.3 　　　 0.1 Structure 4.5±0.3 　　　 0.1 2.8±0.2 　　　 0.1 (1) (2) (3) for (TO-220) 2) Low IR 3) High reliability ed Construction nd s Silicon epitaxial planar ① 1.2 1.3 0.8 (1) (2) (3) 5.0±0.2 8.0±0.2 12.0±0.2 13.5MIN 15.0±0.4 　 0.2 8.0 0.7±0.1 0.05 2.6±0.5 me ign ROHM :ＴO220FN ① Manufacture Date m es Absolute maximum ratings (Ta=25C) Parameter Symbol Limits o D Reverse voltage (repetitive peak) c Reverse voltage (DC) Average rectified forward current(*1) VRM 60 VR 60 Io 30 e Forward current surge peak (60Hz/1cyc) (*1) IFSM 100 w Junction temperature Tj 150 Storage temperature Tstg 40 to 150 R e (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Ta=108C t N Electrical characteristic (Ta=25C) Parameter o Forward characteristics NReverse characteristics Symbol Min. Typ. Max. VF - - 0.63 IR - - 600 Unit V V A A C C Unit Conditions V IF=15A μA VR=60V Thermal impedance jc - - 1.75 C/W junction to case www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.C RB225T-60 　 Electrical characteristic curves Data Sheet 100 1000000 Ta=150C Ta=125C 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(A) Ta=150C 10 Ta=125C 100000 10000 Ta=75C 1000 f=1MHz 1000 1 Ta=-25C Ta=25C 100 Ta...