XB1004 Amplifier Datasheet

XB1004 Datasheet, PDF, Equivalent


Part Number

XB1004

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 10 Pages
Datasheet
Download XB1004 Datasheet


XB1004
16.0-30.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Features
High Dynamic Range
Excellent LO Driver/Buffer Amplifier
Low Noise or Power Bias Configurations
21.0 dB Small Signal Gain
2.2 dB Noise Figure at Low Noise Bias
+19.0 dBm P1dB Compression Point at Power Bias
100% On-Wafer RF, DC and Noise Figure Testing
100% Visual Inspection to MIL-STD-883
Method 2010
Chip Device Layout
B1004
General Description
Mimix Broadbands three stage 16.0-30.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 21.0 dB
with a noise figure of 2.2 dB across the band.This MMIC
uses Mimix Broadbands 0.15 µm GaAs PHEMT device
model technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The chip has surface passivation to protect
and provide a rugged part with backside via holes and
www.DataSheet4U.com
gold metallization to allow either a conductive epoxy
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.5 VDC
200 mA
+0.3 VDC
+5 dBm
-65 to +165 OC
-55 to MTTF Table5
MTTF Table5
or eutectic solder die attach process.This device is well
suited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
(5) Channel temperature affects a device's MTBF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)3
Output Return Loss (S22)3
Small Signal Gain (S21)3
Gain Flatness (S21)
Reverse Isolation (S12)3
Noise Figure (NF) 4
Output Power for 1 dB Compression (P1dB) 1,2,3
Output Third Order Intercept Point (OIP3)1,2,3
Saturated Output Power (Psat)1,2,3
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1c,2c)
Supply Current (Id) (Vd=4.0V, Vg=-0.3V Typical)
Units Min. Typ. Max.
GHz 16.0 - 30.0
dB 6.0 14.0 -
dB 10.0 14.0
-
dB 18.0 21.0 24.0
dB - +/-1.0 -
dB 40.0 50.0
-
dB - 2.2 3.0
dBm - +19.0 -
dBm - +29.0 -
dBm - +22.0 -
VDC - +4.0 +6.0
VDC -1.2 -0.3 +0.1
mA - 90 180
(1) Optional low noise bias Vd1,2=4.0V, Id=90mA will typically yield 3-4dB decreased P1dB and OIP3.
(2) Measured using constant current.
(3) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=6.0V, Id1=90mA, Id2=90mA.
(4) Unless otherwise indicated Min/Max over 17.0-28.0 GHz and biased at Vd=4.0V, Id1=45mA, Id2=45mA.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 10
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1004
16.0-30.0 GHz GaAs MMIC
Buffer Amplifier
April 2005 - Rev 01-Apr-05
Buffer Amplifier Measurements
XB1004 Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA
~7000 Devices
24
23
22
21
20
19
18
17
16
15
14
16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0
Frequency (GHz)
+ 3 sigma Median Mean - 3 sigma
B1004
XB1004 Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA
~7000 Devices
0
-10
-20
-30
-40
-50
-60
-70
-80
16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0
Frequency (GHz)
Max Median Mean - 3 sigma
XB1004 Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA
~7000 Devices
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0
Frequency (GHz)
+ 3 sigma Median Mean - 3 sigma
XB1004 Vd1,2=4.0 V Id1=22.5 mA, Id2=45 mA
~7000 Devices
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
16.0 17.0 18.0 19.0 20.0 21.0 22.0 23.0 24.0 25.0 26.0 27.0 28.0 29.0 30.0
Frequency (GHz)
+ 3 sigma Median Mean - 3 sigma
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 10
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features 16.0-30.0 GHz GaAs MMIC Buffer Amplifier April 2005 - Rev 01-Apr-05 B1004 Chip Device Layout Features High Dynamic R ange Excellent LO Driver/Buffer Amplifi er Low Noise or Power Bias Configuratio ns 21.0 dB Small Signal Gain 2.2 dB Noi se Figure at Low Noise Bias +19.0 dBm P 1dB Compression Point at Power Bias 100 % On-Wafer RF, DC and Noise Figure Test ing 100% Visual Inspection to MIL-STD-8 83 Method 2010 Mimix Broadband’s thr ee stage 16.0-30.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 2 1.0 dB with a noise figure of 2.2 dB ac ross the band. This MMIC uses Mimix Bro adband’s 0.15 µm GaAs PHEMT device m odel technology, and is based upon elec tron beam lithography to ensure high re peatability and uniformity. The chip ha s surface passivation to protect and pr ovide a rugged part with backside via h oles and www.DataSheet4U.com gold metal lization to allow either a conductive e poxy or eutectic solder die attach proc ess. This device is well suited for Millimeter-wave Point-to-Point R.
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