XB1007-BD Datasheet PDF | Mimix Broadband





(PDF) XB1007-BD Datasheet PDF

Part Number XB1007-BD
Description GaAs MMIC Buffer Amplifier
Manufacture Mimix Broadband
Total Page 9 Pages
PDF Download Download XB1007-BD Datasheet PDF

Features: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier March 2007 - Rev 06-Mar-07 B1007-BD Ch ip Device Layout Features Excellent Tr ansmit LO/Output Buffer Stage Compact S ize 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Fi gure 100% On-Wafer RF, DC and Output Po wer Testing 100% Visual Inspection to M IL-STD-883 Method 2010 General Descrip tion Mimix Broadband’s two stage 4.0- 11.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 23.0 dB with a +20.0 dBm P1dB output compression point . This MMIC uses Mimix Broadband’s 0. 15 µm GaAs PHEMT device model technolo gy, and is based upon electron beam lit hography to ensure high repeatability a nd uniformity. The chip has surface pas sivation to protect and provide a rugge d part with backside via holes and gold metallization to allow either a conduc tive epoxy or eutectic solder die attac h process. This device is well suited f or www.DataSheet4U.com Microwave and Mi llimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applicatio.

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XB1007-BD datasheet
4.0-11.0 GHz GaAs MMIC
Buffer Amplifier
March 2007 - Rev 06-Mar-07
Features
Excellent Transmit LO/Output Buffer Stage
Compact Size
23.0 dB Small Signal Gain
+20.0 dBm P1dB Compression Point
4.5 dB Noise Figure
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
General Description
Mimix Broadband’s two stage 4.0-11.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 23.0
dB with a +20.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
www.DataSheet4U.com
Microwave and Millimeter-wave Point-to-Point Radio,
LMDS, SATCOM and VSAT applications.
B1007-BD
Chip Device Layout
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
180 mA
+0.3 VDC
+20.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure
Output Power for 1dB Compression (P1dB) 2
Saturated Output Power (Psat)
Drain Bias Voltage (Vd2)
Gate Bias Voltage (Vg2)
Supply Current (Id) (Vd=4.5V, Vg2=-0.5V Typical)
(2) Measured using constant current.
Units Min. Typ. Max.
GHz 4.0
- 11.0
dB - 20.0 -
dB - 12.0 -
dB - 23.0 -
dB - +/-1.5 -
dB - 65.0 -
dB - 4.5 -
dBm - +20.0 -
dBm - +21.0 -
VDC - +4.5 +5.5
VDC -1.0 -0.5 0.0
mA - 130 155
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

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