XB1009-BD Amplifier Datasheet

XB1009-BD Datasheet, PDF, Equivalent


Part Number

XB1009-BD

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 7 Pages
Datasheet
Download XB1009-BD Datasheet


XB1009-BD
14.0-30.0 GHz GaAs MMIC
Buffer Amplifier
February 2007 - Rev 05-Feb-07
Features
Excellent Transmit LO/Output Buffer Stage
On-Chip ESD Protection
18.0 dB Small Signal Gain
+22.0 dBm P1dB Compression Point
100% On-Wafer RF, DC and Output Power Testing
100% Visual Inspection to MIL-STD-883 Method 2010
B1009-BD
Chip Device Layout
General Description
Mimix Broadband’s three stage 14.0-30.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 18.0
dB with a +22.0 dBm P1dB output compression point.
This MMIC uses Mimix Broadband’s 0.15 µm GaAs
PHEMT device model technology, and is based upon
electron beam lithography to ensure high
repeatability and uniformity.The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow
either a conductive epoxy or eutectic solder die
attach process.This device is well suited for
www.DataSheet4U.com
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM
and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
110, 340 mA
+0.3 VDC
+12.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB) 2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd=5.0V, Vg=-0.6V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.6V Typical)
(2) Measured using constant current.
Units Min. Typ. Max.
GHz 14.0 - 30.0
dB - 7.0 -
dB - 8.0 -
dB - 18.0 -
dB - +/-4.0 -
dB - 40.0 -
dBm - +22.0 -
VDC - +5.0 +5.5
VDC -1.0 -0.6 0.0
mA - 80 95
mA - 240 290
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1009-BD
14.0-30.0 GHz GaAs MMIC
Buffer Amplifier
February 2007 - Rev 05-Feb-07
Buffer Amplifier Measurements
XB1009-BD Vd1,2=5.0 V, Id1=80 mA, Id2=240 mA
28
26
24
22
20
18
16
14
12
10
8
6
4
2
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0
Frequency (GHz)
XB1009-BD Vd1,2=5.0 V, Id1=80 mA, Id2=240 mA
0
-5
-10
-15
-20
-25
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0
Frequency (GHz)
B1009-BD
XB1009-BD Vd1,2=5.0 V, Id1=80 mA, Id2=240 mA
0
-10
-20
-30
-40
-50
-60
-70
-80
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0
Frequency (GHz)
XB1009-BD Vd1,2=5.0 V, Id1=80 mA, Id2=240 mA
0
-5
-10
-15
-20
-25
10.0 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0 30.0 32.0 34.0 36.0
Frequency (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 7
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features 14.0-30.0 GHz GaAs MMIC Buffer Amplifier February 2007 - Rev 05-Feb-07 B1009-B D Chip Device Layout Features Excellen t Transmit LO/Output Buffer Stage On-Ch ip ESD Protection 18.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point 1 00% On-Wafer RF, DC and Output Power Te sting 100% Visual Inspection to MIL-STD -883 Method 2010 General Description M imix Broadband’s three stage 14.0-30. 0 GHz GaAs MMIC buffer amplifier has a small signal gain of 18.0 dB with a +22 .0 dBm P1dB output compression point. T his MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithog raphy to ensure high repeatability and uniformity. The chip has surface passiv ation to protect and provide a rugged p art with backside via holes and gold me tallization to allow either a conductiv e epoxy or eutectic solder die attach p rocess. This device is well suited for www.DataSheet4U.com Millimeter-wave Poi nt-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Max.
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