Buffer Amplifier. XB1009-QT Datasheet

XB1009-QT Datasheet PDF, Equivalent


Part Number

XB1009-QT

Description

GaAs MMIC Buffer Amplifier

Manufacture

Mimix Broadband

Total Page 8 Pages
PDF Download
Download XB1009-QT Datasheet PDF


XB1009-QT Datasheet
12.0-27.0 GHz GaAs MMIC
Buffer Amplifier, QFN
February 2007 - Rev 08-Feb-07
Features
Excellent Transmit LO/Output Buffer Stage
On-Chip ESD Protection
16.0 dB Small Signal Gain
+22.0 dBm P1dB Compression Point
RoHS Compliant SMD, 3x3 mm QFN Package
100% RF, DC, and Output Power Testing
B1009-QT
General Description
Mimix Broadband’s three stage 12.0-27.0 GHz GaAs
MMIC buffer amplifier has a small signal gain of 16.0
dB with a +22.0 dBm P1dB output compression point
across much of the band.This MMIC uses Mimix
Broadband’s 0.15 µm GaAs PHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.The device comes in a RoHS compliant
3x3mm QFN Surface Mount Package offering
excellent RF and thermal properties.This device is well
www.DataSheet4U.comsuited for Millimeter-wave Point-to-Point Radio, LMDS,
SATCOM and VSAT applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)
+6.0 VDC
90, 260 mA
+0.3 VDC
+12.0 dBm
-65 to +165 OC
-55 to MTTF Graph1
MTTF Graph1
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)
Output Return Loss (S22)
Small Signal Gain (S21)
Gain Flatness ( S21)
Reverse Isolation (S12)
Noise Figure (NF)
Output Power for 1dB Compression (P1dB) 2
Drain Bias Voltage (Vd1,2)
Gate Bias Voltage (Vg1,2)
Supply Current (Id1) (Vd=5.0V, Vg=-0.6V Typical)
Supply Current (Id2) (Vd=5.0V, Vg=-0.6V Typical)
Units Min. Typ. Max.
GHz 12.0 - 27.0
dB - 10.0 -
dB - 10.0 -
dB - 16.0 -
dB - +/-3.0 -
dB - 45.0 -
dB - 5.0 -
dBm - +22.0 -
VDC - +5.0 +5.5
VDC -1.0 -0.6 0.0
mA - 60 75
mA - 180 220
(2) Measured using constant current.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XB1009-QT Datasheet
12.0-27.0 GHz GaAs MMIC
Buffer Amplifier, QFN
February 2007 - Rev 08-Feb-07
Buffer Amplifier Measurements
XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA
24
22
20
18
16
14
12
10
8
6
4
2
0
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
+90 Deg C -40 Deg C +25 Deg C
XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA
0
-5
-10
-15
-20
-25
-30
-35
-40
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
*Includes fixture losses
Frequency (GHz)
+90 Dec C -40 Deg C +25 Deg C
26
25
24
23
22
21
20
19
18
17
16
17.0
XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA
18.0
19.0
20.0 21.0
Frequency (GHz)
22.0
23.0
+85 Deg C
-40 Deg C
+25 Deg C
24.0
B1009-QT
XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA
0
-10
-20
-30
-40
-50
-60
-70
-80
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
Frequency (GHz)
+90 Deg C -40 Deg C +25 Deg C
XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA
0
-5
-10
-15
-20
-25
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
*Includes fixture losses
Frequency (GHz)
+90 Deg C -40 Deg C +25 Deg C
XB1009-QT Vd1,2=5.0 V, Id1=60 mA, Id2=180 mA
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
17.0 18.0 19.0
*Includes fixture losses
20.0
21.0
Frequency (GHz)
+90 Deg C
-40 Deg C
22.0 23.0
+25 Deg C
24.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.


Features Datasheet pdf 12.0-27.0 GHz GaAs MMIC Buffer Amplifier , QFN February 2007 - Rev 08-Feb-07 B1 009-QT Features Excellent Transmit LO/ Output Buffer Stage On-Chip ESD Protect ion 16.0 dB Small Signal Gain +22.0 dBm P1dB Compression Point RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, an d Output Power Testing General Descrip tion Mimix Broadband’s three stage 12 .0-27.0 GHz GaAs MMIC buffer amplifier has a small signal gain of 16.0 dB with a +22.0 dBm P1dB output compression po int across much of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is b ased upon electron beam lithography to ensure high repeatability and uniformit y. The device comes in a RoHS compliant 3x3mm QFN Surface Mount Package offeri ng excellent RF and thermal properties. This device is well www.DataSheet4U.co m suited for Millimeter-wave Point-to-P oint Radio, LMDS, SATCOM and VSAT appli cations. Absolute Maximum Ratings Supp ly Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Inpu.
Keywords XB1009-QT, datasheet, pdf, Mimix Broadband, GaAs, MMIC, Buffer, Amplifier, B1009-QT, 1009-QT, 009-QT, XB1009-Q, XB1009-, XB1009, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)