XD1005-QT

10.0-40.0 GHz GaAs MMIC Distributed Amplifier, QFN February 2007 - Rev 08-Feb-07 D1005-QT Features Ultra Wide Band Driver Amplifier Self Biased Architecture 18.0 dB Small Signal Gain 6.0 dB Noise Figure RoHS Compliant SMD, 3x3 mm QFN Package 100% RF, DC, and Output Power Testing General Description Mimix Broadband’s three stage 10.0-40.0 GHz GaAs MMIC distributed amplifier has a small signal gain of 18.0 dB with a 6.0 dB noise figure across much of the band. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a RoHS compliant 3x3mm QFN Surface Mount Package offering excellent RF and thermal properties. This device is well suited for Millimeter-wave www.DataSheet4U.com Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 240 mA +17.0 dBm -65 to +165 OC -55 to MTTF Graph1 MTTF Graph1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12) Noise Figure (NF) Output Power for 1dB Compression ...