XP1003

27.0-35.0 GHz GaAs MMIC Power Amplifier May 2005 - Rev 05-May-05 P1003 Chip Device Layout Features Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector 15.0 dB Small Signal Gain +34.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Gain Flatness (∆S21) Reverse Isolation (S12) Output Power for 1 dB Compression (P1dB) 2 Output Third Order Intercept Point (OIP3) 1,2 Drain Bias Voltage (Vd1,2,3,4) Gate Bias Voltage (Vg1,2,3,4) Supply Current (Id) (Vd=4.5V, Vg=-0.7V Typical) Detector (diff ) Output at 20 dBm 3 Units GHz dB dB dB dB dB dBm dBm VDC VDC mA VDC Min. 27.0 -1.0 Typ. 12.0 18.0 15.0 +/-1.0 35.0 +24.0 +34.0 +4.5 -0.7 440 0.3 Max. 35.0 +5.5 0.0 880 - Pr (1) Measured at +17 dBm per tone output carrier level across the full frequency band. (2) Measured using constant current. (3) Measured with either Vin=1.0V or Vin=5.5V and Rin=5.6kΩ. e- pr Mimix Broadband’s two stage 27.0-35.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +34.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEM...