XP1006-FA

8.5-11.0 GHz GaAs Power Amplifier Flange, 10 pin August 2006 - Rev 16-Aug-06 P1006-FA Features X-Band 10W Power Amplifier Flange Package 21.5 dB Large Signal Gain +40.5 dBm Saturated Output Power 37% Power Added Efficiency 100% On-Wafer RF, DC and Output Power Testing Mimix Broadband’s three stage 8.5-11.0 GHz GaAs packaged power amplifier has a large signal gain of 21.5 dB with a +40.5 dBm saturated output power. This device uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The device comes in a 10 pin, high frequency, LCC flange package. The package has a copper composite base material and a laminated ceramic substrate. This device is well suited for radar www.DataSheet4U.com applications. General Description Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +9.0 VDC 4.5 A +0.0 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Pulsed Mode F=10kHz, Duty Cycle=5%,TA=25ºC) Parameter Frequency Range (f ) Input Return Loss (S11)1 Output Return Loss (S22)1 Large Signal Gain (S21) Gain Flatness ( S21) Reverse Isolation (S12)1 Saturated Output Power (PSAT) Power Added Efficiency ...