XP1012

37.0-40.0 GHz GaAs MMIC Power Amplifier May 2006 - Rev 10-May-06 Velocium Products 18 - 20 GHz HPA - APH478 P1012 Chip Device Layout Features Excellent Linear Output Amplifier Stage 15.0 dB Small Signal Gain +28.0 dBm Output P1dB Compression Point +37.0 dBm Third Order Intercept (OIP3) 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s two stage 37.0-40.0 GHz GaAs MMIC power amplifier is optimized for linear operation with a third order intercept point of +37.0 dBm. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy www.DataSheet4U.com or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2) Gate Bias Voltage Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +5.5 VDC 600,600 mA +0.3 VDC +19 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3 (3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 o...