XP1016

43.5-46.5 GHz GaAs MMIC Power Amplifier May 2005 - Rev 10-May-05 P1016 Chip Device Layout Features Excellent Driver Stage 14.0 dB Small Signal Gain +24.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's three stage 43.5-46.5 GHz GaAs MMIC power amplifier has a small signal gain of 14.0 dB with +24.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die www.DataSheet4U.com attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.0 VDC 1160 mA +0.3 VDC +20 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Characteristics (Ambient Temperature T = 25 oC) Parameter Frequency Range (f ) Input Return Loss (S11) Output Return Loss (S22) Small Signal Gain (S21) Ga...