XP1027-BD

27.0-33.0 GHz GaAs MMIC Power Amplifier March 2007 - Rev 27-Mar-07 P1027-BD Chip Device Layout Features Ka-Band 4 W Power Amplifier Balanced Design Provides Good Input/Output Match 21.0 dB Small Signal Gain +35.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 XP1027-BD General Description Mimix Broadband's three stage 27.0-33.0 GHz GaAs MMIC power amplifier has a small signal gain of 21.0 dB with +35 dBm saturated output power. The device also includes Lange couplers to achieve good input/output return loss. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for www.DataSheet4U.com Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vd) Supply Current (Id1,2,3) Gate Bias Voltage (Vg) Input Power (Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch) +6.5 VDC 325,825,1575 mA +0.3 VDC TBD -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life. Electrical Ch...