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XX1000

Mimix Broadband

GaAs MMIC Active Doubler

7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler April 2006 - Rev 10-Apr-06 X1000 Chip Device Layout Features Excellent...


Mimix Broadband

XX1000

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7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler April 2006 - Rev 10-Apr-06 X1000 Chip Device Layout Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband’s single ended fed (no external balun required) 7.5-25.0/15.0-50.0 GHz GaAs MMIC doubler has a +15.0 dBm output drive and is an excellent LO doubler that can be used to drive fundamental mixer devices. It is also well suited to drive Mimix's XR1002 receiver device. This MMIC uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Parameter Input Frequency Range (fin) Output Frequency Range (fout) Input Return Loss (S11) Output Return Loss (S22) Harmonic Gain (fout) Fundamental Rejection (fin) Saturated Output Power (Psat) RF Input Power (RF Pin) Output Power at +0.0 dBm Pin (Pout) Drain Bias Voltage (Vd1,2) Gate Bias Voltage (Vg1) Gate Bias Voltage (Vg2) Supply Current (Id1,2) (Vd=5.0V, Vg1=-0.6V,...




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