XX1002

2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler December 2005 - Rev 08-Dec-05 X1002 Chip Device Layout Features Compact, Low-Cost Design Octave Bandwidth Operation +16 dBm Output Power -35 dBc Fundamental Leakage +5.0V, 125mA Bias Supply 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883 Method 2010 General Description Mimix Broadband's 2.5-6.0/5.0-12.0 GHz GaAs MMIC Active Doubler delivers + 16 dBm of output power. The circuit combines an active doubler with an output buffer amplifier that delivers constant power over a range of input powers. The circuit has excellent rejection of the fundamental and harmonic products and requires a single positive bias supply. This MMIC uses Mimix Broadband's 2 um GaAs HBT device model technology to ensure high reliability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Maximum Ratings Supply Voltage (Vcc) Supply Current (Id) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Junction Temperature (Tj) +6.0 VDC 200 mA +10.0 dBm -65 to +165 OC -55 to MTTF Table1 MTTF Table 1 (1) Junction temperature affects a device's MTTF. It is recommended to keep junction temperature as low as possible for maximum life. Electric...