Power MOSFET
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Aval...
Description
l Advanced Process Technology l Ultra Low On-Resistance l 150°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Some Parameters are Different from
IRF5210S/L l P-Channel l Lead-Free
Description Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
PD - 97049B
IRF5210SPbF IRF5210LPbF
HEXFET® Power MOSFET
D
VDSS = -100V
RDS(on) = 60mΩ
G
S
ID = -38A
D
D
S D G
D2Pak IRF5210SPbF
S D G
TO-262 IRF5210LPbF
G Gate
D Drain
S Source
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V
c Pulsed Drain Current
Maximum Power Dissipation Maximum Power Dissipation
VGS EAS IAR EAR
dv/dt
Linear Derating Factor Gate-to-Source Voltage
d Single Pulse Avalanche Energy c Avalanche Current c Repetitive Avalanche Energy e Peak Diode Recovery dv/dt
TJ TSTG
Operating Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC
Junction-to-Case
RθJA
g Junction-to-Ambient (PCB Mount, steady state)
Max. -38 -24 -140 3.1 170
1.3 ± 20 120 -23 17 -7.4 -55 to + 150
300 (1.6mm from case )
Typ. ––– –––
Max. 0.75 40
Units A
W
W/°C V mJ A mJ
V/ns °C
Units °C/W
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