HEXFET Power MOSFET
PD - 96012B
IRF6100PbF
HEXFET® Power MOSFET
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Ultra Low RDS(on) per Footprint Area Low Thermal Resistance ...
Description
PD - 96012B
IRF6100PbF
HEXFET® Power MOSFET
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Ultra Low RDS(on) per Footprint Area Low Thermal Resistance P-Channel MOSFET One-third Footprint of SOT-23 Super Low Profile (<.8mm) Available Tested on Tape & Reel Lead-Free
VDSS
-20V
RDS(on) max
0.065Ω@VGS = -4.5V 0.095Ω@VGS = -2.5V
ID
-5.1A -4.1A
Description
True chip-scale packaging is available from International Rectifier. Through the use of advanced processing techniques, and a unique packaging concept, extremely low on-resistance and the highest power densities in the industry have been made available for battery and load management applications. These benefits, combined with the ruggedized device design , that International Rectifier is well known for, provides the designer with an ex-
D
G S
FlipFET ISOMETRIC
tremely efficient and reliable device.
www.DataSheet4U.com
The FlipFET™ package, is one-third the footprint of a comparable SOT-23 package and has a profile of less than .8mm. Combined with the low thermal resistance of the die level device, this makes the FlipFET™ the best device for application where printed circuit board space is at a premium and in extremely thin application environments such as battery packs, cell phones and PCMCIA cards.
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current Power Dissipation P...
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